hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 90

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Figure 70
Table 43
Parameter
Maximum peak amplitude allowed for overshoot area 0.9
Maximum peak amplitude allowed for undershoot area 0.9
Maximum overshoot area above
Maximum undershoot area below
Figure 71
Data Sheet
AC Overshoot / Undershoot Diagram for Address and Control Pins
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask Pins
AC Overshoot / Undershoot Diagram for Clock, Data, Strobe and Mask Pins
V
VSS
V
VDD
VSSQ
VDDQ
DDQ
SSQ
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
Time (ns)
Time (ns)
90
DDR2-400
0.38
0.38
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
DDR2-533
0.9
0.9
0.28
0.28
Overshoot Area
Overshoot Area
Undershoot Area
Undershoot Area
AC & DC Operating Conditions
512-Mbit DDR2 SDRAM
DD2-667
0.9
0.9
0.23
0.23
09112003-SDM9-IQ3P
Rev. 1.3, 2005-01
Unit
V
V
V.ns
V.ns