at29lv040a ATMEL Corporation, at29lv040a Datasheet
at29lv040a
Manufacturer Part Number
at29lv040a
Description
4-megabit 512k X 8 3-volt Only 256-byte Sector Flash Memory
Manufacturer
ATMEL Corporation
Datasheet
1.AT29LV040A.pdf
(16 pages)
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1. Description
The AT29LV040A is a 3-volt only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times to 150 ns, and a low 54 mW power dissipation. When
the device is deselected, the CMOS standby current is less than 40 µA. The device
endurance is such that any sector can typically be written to in excess of 10,000
times. The programming algorithm is compatible with other devices in Atmel’s 3-volt
only Flash memories.
To allow for simple in-system reprogrammability, the AT29LV040A does not require
high input voltages for programming. Three-volt-only commands determine the opera-
tion of the device. Reading data out of the device is similar to reading from an
EPROM. Reprogramming the AT29LV040A is performed on a sector basis; 256 bytes
of data are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 256 bytes of data are captured at
microprocessor speed and internally latched, freeing the address and data bus for
other operations. Following the initiation of a program cycle, the device will automati-
cally erase the sector and then program the latched data using an internal control
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the
end of a program cycle has been detected, a new access for a read or program can
begin.
Single Voltage, Range 3V to 3.6V Supply
3-volt Only Read and Write Operation
Software Protected Programming
Fast Read Access Time – 150 ns
Low Power Dissipation
Sector Program Operation
Two 16K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time – 20 ms Max
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
– 15 mA Active Current
– 40 µA CMOS Standby Current
– Single Cycle Reprogram (Erase and Program)
– 2048 Sectors (256 Bytes/Sector)
– Internal Address and Data Latches for 256 Bytes
4-megabit
(512K x 8)
3-volt Only
256-byte Sector
Flash Memory
AT29LV040A
0334G–FLASH–2/05
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