is41lv16100b Integrated Silicon Solution, Inc., is41lv16100b Datasheet - Page 5

• Manufacturer Part Number: is41lv16100b
• Description: 1m X 16 16-mbit Dynamic Ram With Edo Page Mode
• Manufacturer: Integrated Silicon Solution, Inc.

IS41LV16100B
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
RECOMMENDED OPERATING CONDITIONS
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. C
12/11/06
Symbol
Symbol
V
V
I
P
T
T
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
C
C
C
OUT
Symbol
T
DD
D
A
STG
IN
IN
IO
1
2
V
V
V
T
DD
IH
IL
A
Parameters
Voltage on Any Pin Relative to GND
Supply Voltage
Output Current
Power Dissipation
Commercial Operation Temperature
Industrial Operation Temperature
Storage Temperature
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Industrial Ambient Temperature
Parameter
Input Capacitance: A0-A9
Input Capacitance: RAS, UCAS, LCAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O15
A
(1,2)
= 25°C, f = 1 MHz.
(1)
3.3V
3.3V
3.3V
3.3V
3.3V
1-800-379-4774
(Voltages are referenced to GND.)
–0.5 to +4.6
–0.5 to +4.6
–55 to +125
-40 to +85
Min.
–0.3
–40
3.0
2.0
0 to +70
Rating
0
50
1
Max.
Typ.
3.3
—
—
—
—
5
7
7
Unit
mA
°C
°C
°C
W
V
V
V
DD
Max.
3.6
0.8
70
85
Unit
+ 0.3
pF
pF
pF
Unit
°C
°C
V
V
V
ISSI
®
5