m29dw128f-70za6t Numonyx, m29dw128f-70za6t Datasheet - Page 48

• Manufacturer Part Number: m29dw128f-70za6t
• Description: 128 Mbit 16mb X8 Or 8mb X16, Multiple Bank, Page, Boot Block 3v Supply Flash Memory
• Manufacturer: Numonyx

Command interface
Table 17.
Table 18.
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
48/94
Password Protection Mode Lock bit Address
(PL)
Standard Protection Mode Lock bit Address (SL)
Non-Volatile Modify Protection bit Address (NVMP)
Extended Block Protection bit Address (OW)
Chip Erase
Block Erase (64 kbytes)
Erase Suspend Latency Time
Byte Program
Word Program
Chip Program (byte by byte)
Chip Program (Word by Word)
Chip Program (Quadruple byte or Double Word)
Chip Program (Octuple byte or Quadruple Word)
Program Suspend Latency Time
Program/Erase Cycles (per Block)
Data Retention
Protection Command Addresses
Program, Erase Times and Program, Erase Endurance Cycles
Single or Multiple byte Program
(1, 2, 4 or 8 bytes at-a-time)
Write to Buffer and Program
(64 bytes at-a-time)
Single or Multiple Word Program
(1, 2 or 4 Words at-a-time)
Write to Buffer and Program
(32 Words at-a-time)
Bit
Parameter
Condition
V
V
V
V
RP at V
RP at V
PP
PP
PP
PP
/WP =V
/WP=V
/WP=V
/WP=V
IH
ID
IH
PPH
IH
PPH
Address Inputs A7-A0
100,000
Min
00001010
10001010
00010010
00000010
00011010
20
CC
CC
.
after 100,00 program/erase cycles.
Typ
280
280
0.8
80
10
90
10
90
80
40
20
10
5
(1)(2)
Block Protection Group
Other Address Inputs
1400
1400
Max
400
200
700
200
700
400
200
100
50
50
Address
6
15
M29DW128F
(4)
(4)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(2)
(3)
(3)
X
X
X
X
cycles
years
Unit
µs
µs
µs
µs
µs
µs
µs
µs
s
s
s
s
s
s