m29dw640f Numonyx, m29dw640f Datasheet

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m29dw640f

Manufacturer Part Number
m29dw640f
Description
64 Mbit 8mb X8 Or 4mb X16, Multiple Bank, Page, Boot Block 3v Supply Flash Memory
Manufacturer
Numonyx
Datasheet

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Feature summary
December 2007
Supply voltage
– V
– V
Asynchronous Page Read mode
– Page Width 8 Words
– Page Access 25, 30ns
– Random Access 60, 70ns
Programming time
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes at-a-time Program
Memory blocks
– Quadruple Bank Memory Array:
– Parameter Blocks (at both Top and Bottom)
Dual operations
– While Program or Erase in a group of
Program/Erase Suspend and Resume
– Read from any Block during Program
– Read and Program another Block during
Unlock Bypass Program command
– Faster Production/Batch Programming
V
Temporary Block Unprotection mode
Common Flash Interface
– 64 bit Security Code
Extended Memory Block
– Extra block used as security block or to
PP
Read
8Mbit+24Mbit+24Mbit+8Mbit
banks (from 1 to 3), Read in any of the
other banks
Suspend
Erase Suspend
store additional information
/WP pin for Fast Program and Write Protect
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)
CC
PP
=12V for Fast Program (optional)
= 2.7V to 3.6V for Program, Erase and
Rev 4
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic Signature
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2202h + 2201
ECOPACK
3V Supply Flash Memory
®
packages available
TFBGA48 (ZE)
TSOP48 (N)
12 x 20mm
6 x 8 mm
FBGA
M29DW640F
www.numonyx.com
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m29dw640f Summary of contents

Page 1

... Temporary Block Unprotection mode ■ Common Flash Interface – 64 bit Security Code ■ Extended Memory Block – Extra block used as security block or to store additional information December 2007 M29DW640F 3V Supply Flash Memory TSOP48 ( 20mm FBGA TFBGA48 (ZE ■ Low power consumption – ...

Page 2

... CC 2.13 V Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.1 Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.2 Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.3 Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.4 Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.5 Automatic Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.6 Special bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.6.1 3.6.2 4 Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.1 Standard commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.1.1 4.1.2 4.1.3 2/74 WP PP/ Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Block Protect and Chip Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Read/Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Auto Select command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Read CFI Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 M29DW640F ...

Page 3

... M29DW640F 4.1.4 4.1.5 4.1.6 4.1.7 4.1.8 4.1.9 4.1.10 4.2 Fast Program commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.2.1 4.2.2 4.2.3 4.2.4 4.2.5 4.2.6 4.2.7 4.2.8 4.3 Block Protection commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 4.3.1 4.3.2 4.3.3 5 Status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 5.1 Data Polling Bit (DQ7 5.1.1 5.1.2 5.1.3 5.1.4 6 Dual operations and multiple bank architecture . . . . . . . . . . . . . . . . . 36 7 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 9 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 10 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Erase Resume command ...

Page 4

... Contents Appendix A Block addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 Appendix B Common Flash Interface (CFI Appendix C Extended Memory Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 C.1 Factory Locked Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 C.2 Customer Lockable Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Appendix D Block protection D.1 Programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 D.2 In-System technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 4/74 M29DW640F ...

Page 5

... M29DW640F List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 2. Bank architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 3. Hardware protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 4. Bus operations, BYTE = V Table 5. Bus operations, BYTE = V Table 6. Commands, 16-bit mode, BYTE = V Table 7. Commands, 8-bit mode, BYTE = V Table 8. Program, Erase times and Program, Erase Endurance cycles Table 9. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 10 ...

Page 6

... TSOP48 – 48 lead Plastic Thin Small Outline 20mm, package outline . . . . . . . . . . . 52 Figure 19. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package outline . . . . . . . . . . . . . . 53 Figure 20. Programmer Equipment Group Protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 Figure 21. Programmer Equipment Chip Unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 Figure 22. In-System Equipment Group Protect flowchart Figure 23. In-System Equipment Chip Unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 6/74 M29DW640F ...

Page 7

... M29DW640F 1 Summary description The M29DW640F Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical block architecture, with 16 parameter and 126 main blocks, divided into four Banks and D, providing multiple Bank operations ...

Page 8

... M29DW640F BYTE V SS Address Inputs Data Inputs/Outputs Data Inputs/Outputs Data Input/Output or Address Input Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output Byte/Word Organization Select Supply voltage V /Write Protect PP Ground Not Connected Internally M29DW640F DQ0-DQ14 DQ15A–1 RB AI11247 ...

Page 9

... M29DW640F Figure 2. TSOP connections A15 1 A14 A13 A12 A11 A10 A9 A8 A19 A20 M29DW640F A21 /WP RB A18 A17 Summary description 48 A16 BYTE V SS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 DQ11 ...

Page 10

... DQ12 G DQ9 DQ11 DQ1 DQ3 DQ4 Parameter Blocks No. of Blocks Block Size 8 8KByte/ 4 KWord — — — — 8 8KByte/ 4 KWord M29DW640F 5 6 A13 A9 A8 A12 A10 A14 A11 A15 DQ7 A16 DQ14 BYTE DQ15 DQ13 A–1 DQ6 V SS Main Blocks No ...

Page 11

... M29DW640F Figure 4. Block addresses (x8) 000000h 8 KByte or 4 KWord 001FFFh 00E000h 8 KByte or 4 KWord 00FFFFh Bank A 010000h 64 KByte or 32 KWord 01FFFFh 0F0000h 64 KByte or 32 KWord 0FFFFFh 100000h 64 KByte or 32 KWord 10FFFFh Bank B 3F0000h 64 KByte or 32 KWord 3FFFFFh 1. Also see Appendix A , Table 24 for a full listing of the Block addresses. ...

Page 12

... Total of 15 Main Blocks 3F0000h 3F7FFFh Bank D 3F8000h 3F8FFFh Total of 48 Main Blocks 3FF000h 3FFFFFh M29DW640F 64 KByte or 32 KWord Total of 48 Main Blocks 64 KByte or 32 KWord 64 KByte or 32 KWord Total of 15 Main Blocks 64 KByte or 32 KWord 8 KByte or 4 KWord ...

Page 13

... M29DW640F 2 Signal descriptions See Figure 1: Logic diagram connected to this device. 2.1 Address Inputs (A0-A21) The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the internal state machine. ...

Page 14

... V All blocks temporarily unprotected except the 4 outermost blocks ID V All blocks temporarily unprotected All blocks temporarily unprotected IH ID M29DW640F function allows the memory to PP /Write Protect is Low, PP Table 3: Hardware protection or V normal operation resumes from the pin to supply the ...

Page 15

... M29DW640F 2.9 Reset/Block Temporary Unprotect (RP) The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected. Note that Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, V least t ...

Page 16

... Signal descriptions 2.13 V Ground the reference for all voltage measurements. The device features two V SS which must be connected to the system ground. 16/74 M29DW640F pins both of SS ...

Page 17

... There are five standard bus operations that control the device. These are Bus Read (Random and Page modes), Bus Write, Output Disable, Standby and Automatic Standby. Using the multiple bank architecture of the M29DW640F, while programming or erasing is underway in one group of banks (from 1 to 3), reading can be conducted in any of the other banks ...

Page 18

... CC . The Data Inputs/Outputs will still output data if a Bus CC2 Appendix A , Table 24: Block addresses the four outermost boot blocks are protected and remain IL M29DW640F Table 4 The whole chip can be Appendix D . ...

Page 19

... M29DW640F Table 4. Bus operations, BYTE = V Operation E G Bus Read Bus Write Output Disable Standby Read Manufacturer Code Read Device Code (Cycle 1) Read Device Code (Cycle 2) Read Device Code ...

Page 20

... Bank Block addrs M29DW640F Data Inputs/Outputs A0 Others DQ15A-1, DQ14-DQ0 Data Output Data Input Hi-Z Hi-Z V 0020h IL V 227Eh IH V 2202h 2201h IH others =X 0080h (factory locked ...

Page 21

... M29DW640F 4 Command interface All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result in the memory returning to Read mode. The long command sequences are imposed to maximize data security. ...

Page 22

... A21-A19 set to Bank Address A. The other bits (Don't Care). If the Extended Block is "Factory Locked" then IL IH (A-1, A0-A10). Once the command is issued subsequent Bus Read Table 25 , Table 26 , Table 27 , Table 28 Table 8 . All Bus Read operations during the Chip Erase M29DW640F Appendix B (A7-A0), will , Table 29 and Table 30 for details on ...

Page 23

... M29DW640F 4.1.5 Block Erase command The Block Erase command can be used to erase a list of one or more blocks in one or more Banks. It sets all of the bits in the unprotected selected blocks to ’1’. All previous data in the selected blocks is lost. Six Bus Write operations are required to select the first block in the list. Each additional block in the list can be selected by repeating the sixth Bus Write operation using the address of the additional block ...

Page 24

... Program-Suspended Block, to exit the Program Suspend mode and to continue the programming operation. Further issuing of the Resume command is ignored. Another Program Suspend command can be written after the device has resumed programming. 24/74 Table 8 for value) and updates the Status Register bits. The Bank M29DW640F ...

Page 25

... M29DW640F 4.1.10 Program command The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write operations, the final Write operation latches the address and data in the internal state machine and starts the Program/Erase Controller. ...

Page 26

... The third bus cycle latches the Address and the Data of the second Byte to be written. 4. The fourth bus cycle latches the Address and the Data of the third Byte to be written. 5. The fifth bus cycle latches the Address and the Data of the fourth Byte to be written and starts the Program/Erase Controller. 26/74 command command M29DW640F ...

Page 27

... M29DW640F 4.2.5 Octuple Byte Program This is used to write eight adjacent Bytes mode, in parallel. The addresses of the eight Bytes must differ only in A1, A0 and DQ15A-1. Nine bus write cycles are necessary to issue the command. 1. The first bus cycle sets up the command. 2. The second bus cycle latches the Address and the Data of the first Byte to be written. ...

Page 28

... Enter Extended Block command The M29DW640F has one extra 256-Byte block (Extended Block) that can only be accessed using the Enter Extended Block command. Three Bus write cycles are required to issue the Extended Block command. Once the command has been issued the device enters Extended Block mode where all Bus Read or Program operations to the 000000h-00007Fh (Word) or 000000h-0000FFh (Byte) addresses access the Extended Block ...

Page 29

... M29DW640F 4.3.3 Block Protect and Chip Unprotect commands Groups of blocks can be protected against accidental Program or Erase. The Protection Groups are shown in Appendix A , Table 24: Block addresses inside the blocks to be changed. Block Protect and Chip Unprotect operations are described in Table 6. Commands, 16-bit mode, BYTE = V ...

Page 30

... Normally the Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands and A11-A21 are Don’t Care, however for the Read CFI command A21-A14 must specify a bank address, and the subsequent read operations must be addressed to the same bank. 30/74 IL Bus Write operations 3rd 4th 5th X F0 (BKA) 90 AAA 00 55 AAA M29DW640F (1) 6th 7th 8th BA 30 9th ...

Page 31

... M29DW640F Table 8. Program, Erase times and Program, Erase Endurance cycles Parameter Chip Erase Block Erase (64 KBytes) Erase Suspend latency time Byte Program ( at-a-time) Word Program ( at-a-time) Chip Program (Byte by Byte) Chip Program (Word by Word) Chip Program (quadruple Byte or double Word) ...

Page 32

... Status register 5 Status register The M29DW640F has one Status Register. The Status Register provides information on the current or previous Program or Erase operations executed in each bank. The various bits convey information and errors on the operation. Bus Read operations from any address within the Bank, always read the Status Register during Program and Erase operations also read during Erase Suspend when an address within a block being erased is accessed ...

Page 33

... M29DW640F 5.1.2 Error Bit (DQ5) The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the correct data to the memory. If the Error Bit is set a Read/Reset command must be issued before other commands are issued ...

Page 34

... Toggle 1 0 Toggle 1 START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA NO FAIL PASS AI07760 M29DW640F DQ3 DQ2 RB – – 0 – – 0 – – Hi-Z 1 Toggle Hi-Z 0 Toggle Toggle 0 1 Toggle Hi-Z 1 ...

Page 35

... M29DW640F Figure 7. Toggle flowchart Address of Bank being Programmed or Erased. START READ DQ6 ADDRESS = BA READ DQ5 & DQ6 ADDRESS = BA DQ6 NO = TOGGLE YES NO DQ5 = 1 YES READ DQ6 TWICE ADDRESS = BA DQ6 NO = TOGGLE YES FAIL PASS AI08929b Status register 35/74 ...

Page 36

... Dual operations and multiple bank architecture The Multiple Bank Architecture of the M29DW640F gives greater flexibility for software developers to split the code and data spaces within the memory array. The Dual Operations feature simplifies the software management of the device by allowing code to be executed from one bank while another bank is being programmed or erased ...

Page 37

... M29DW640F Table 11. Dual operations allowed in same bank Status of bank Read Read Status Array Idle Yes Programming No Erasing No Program (6) Yes Suspended (6) Erase Suspended Yes 1. Read Status Register is not a command. The Status Register can be read during a block program or erase operation. 2. Only after a program or erase operation in that bank. ...

Page 38

... Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions. 2. Maximum voltage may overshoot must not remain at 12V for more than a total of 80hrs. PP 38/74 Parameter (1)(2) +2V during transition and for less than 20ns during transitions. CC M29DW640F Min Max Unit –50 125 °C –65 150 °C – ...

Page 39

... Input Rise and Fall times Input pulse voltages Input and Output Timing Ref. voltages Figure 8. AC measurement I/O waveform 60 Min 2.7 – and AC parameters . Designers should check that the M29DW640F 70 Max Min Max 3.6 2.7 3.6 85 – ...

Page 40

... Device capacitance Symbol Parameter C Input capacitance IN C Output capacitance OUT 1. Sampled only, not 100% tested. 40/ DEVICE UNDER TEST 0.1µF 0.1µ includes JIG capacitance (1) Test condition OUT M29DW640F V CC 25k 25k C L AI05558 Min Max 6 12 Unit pF pF ...

Page 41

... M29DW640F Table 15. DC characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO (1) I Supply Current (Read) CC1 I Supply Current (Standby) CC2 Supply Current (1)(2) I CC3 (Program/Erase) V Input Low voltage IL V Input High voltage IH Voltage for Program V / Acceleration Current for ...

Page 42

... DC and AC parameters Figure 10. Random Read AC waveforms A0-A21/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH 42/74 tAVAV VALID tAVQV tELQV tELQX tGLQX tGLQV tBHQV tBLQZ M29DW640F tAXQX tEHQX tEHQZ tGHQX tGHQZ VALID AI05559 ...

Page 43

... M29DW640F Figure 11. Page Read AC waveforms DC and AC parameters 43/74 ...

Page 44

... OE ( Output Enable High to Output Hi-Z GHQZ DF 1. Sampled only, not 100% tested. 44/74 Parameter Test condition M29DW640F M29DW640F Min Max Max Max 25 25 ...

Page 45

... M29DW640F Figure 12. Write AC waveforms, Write Enable controlled A0-A21/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB tAVAV VALID tAVWL tELWL tGHWL tWLWH tDVWH DC and AC parameters tWLAX tWHEH tWHGL tWHWL tWHDX VALID tWHRL AI05560 45/74 ...

Page 46

... OEH ( Program/Erase Valid to RB Low WHRL BUSY 1. Sampled only, not 100% tested. 46/74 Parameter Min Min Min Min Min Min Min Min Min Min Min Min Max M29DW640F M29DW640F Unit µ ...

Page 47

... M29DW640F Figure 13. Write AC waveforms, Chip Enable controlled A0-A21/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB tAVAV VALID tAVEL tWLEL tGHEL tELEH tDVEH DC and AC parameters tELAX tEHWH tEHGL tEHEL tEHDX VALID tEHRL AI05561 47/74 ...

Page 48

... Write Enable Low to Chip Enable Low WLEL WS 1. Sampled only, not 100% tested. 48/74 Parameter Min Min Min Min Min Min Min Min Min Max Min Min Min M29DW640F M29DW640F Unit ...

Page 49

... M29DW640F Figure 14. Toggle and Alternative Toggle Bits mechanism, Chip Enable controlled Address Outside the Bank A0-A21 Being Programmed or Erased A Data (1) (2) DQ2 /DQ6 Read Operation outside the Bank Being Programmed or Erased 1. The Toggle Bit is output on DQ6. 2. The Alternative Toggle Bit is output on DQ2. ...

Page 50

... Address Transition to Output Enable Low AXGL Figure 16. Reset/Block Temporary Unprotect AC waveforms tPLPX RP Figure 17. Accelerated Program Timing waveforms / tVHVPP 50/74 Parameter tPHWL, tPHEL, tPHGL tPLYH M29DW640F 60 70 Min 10 10 Min 10 10 tRHWL, tRHEL, tRHGL tPHPHH AI02931B tVHVPP AI05563 Unit ns ns ...

Page 51

... RP Rise Time to V PHPHH VIDR ( Rise and Fall Time VHVPP PP 1. Sampled only, not 100% tested. Parameter Min Min Min Max Min ID Min DC and AC parameters M29DW640F Unit 500 500 µs 500 500 ns 250 250 ...

Page 52

... M29DW640F TSOP-G inches Typ Min 0.0039 0.0020 0.0394 0.0374 0.0087 0.0067 0.0039 0.4724 0.4685 0.7874 0.7795 ...

Page 53

... M29DW640F Figure 19. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package outline FE BALL "A1" Drawing is not to scale. Table 22. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package mechanical data Symbol Typ 6.000 D1 4.000 ddd E 8.000 E1 5.600 e 0.800 FD 1 ...

Page 54

... Numonyx sales office. Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact your nearest Numonyx Sales Office. 54/74 M29DW640F 70 N M29DW640F 1 T ...

Page 55

... M29DW640F Appendix A Block addresses Table 24. Block addresses (KBytes/ Block KWords) 0 8/4 1 8/4 2 8/4 3 8/4 4 8/4 5 8/4 6 8/4 7 8/4 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 14 64/32 15 64/32 16 64/32 17 64/32 18 64/32 19 64/32 20 64/32 21 64/32 22 64/32 Protection Block (x8) Group Protection Group 000000h-001FFFh Protection Group 002000h-003FFFh Protection Group 004000h-005FFFh Protection Group 006000h-007FFFh Protection Group 008000h-009FFFh Protection Group ...

Page 56

... Protection Group 260000h-26FFFFh 270000h-27FFFFh 280000h-28FFFFh 290000h-29FFFFh Protection Group 2A0000h-2AFFFFh 2B0000h-2BFFFFh 2C0000h-2CFFFFh 2D0000h-2DFFFFh Protection Group 2E0000h-2EFFFFh 2F0000h-2FFFFFh M29DW640F (x16) 080000h–087FFFh 088000h–08FFFFh 090000h–097FFFh 098000h–09FFFFh 0A0000h–0A7FFFh 0A8000h–0AFFFFh 0B0000h–0B7FFFh 0B8000h–0BFFFFh 0C0000h–0C7FFFh 0C8000h–0CFFFFh 0D0000h–0D7FFFh 0D8000h–0DFFFFh 0E0000h– ...

Page 57

... M29DW640F Table 24. Block addresses (continued) (KBytes/ Block KWords) 55 64/32 56 64/32 57 64/32 58 64/32 59 64/32 60 64/32 61 64/32 62 64/32 63 64/32 64 64/32 65 64/32 66 64/32 67 64/32 68 64/32 69 64/32 70 64/32 71 64/32 72 64/32 73 64/32 74 64/32 75 64/32 76 64/32 77 64/32 78 64/32 79 64/32 80 64/32 81 64/32 82 64/32 83 64/32 84 64/32 85 64/32 86 64/32 Protection Block (x8) Group 300000h-30FFFFh 310000h-31FFFFh Protection Group 320000h-32FFFFh 330000h-33FFFFh 340000h-34FFFFh 350000h-35FFFFh Protection Group 360000h-36FFFFh 370000h-37FFFFh 380000h-38FFFFh 390000h-39FFFFh ...

Page 58

... Protection Group 6A0000h–6AFFFFh 6B0000h–6BFFFFh 6C0000h–6CFFFFh 6D0000h–6DFFFFh Protection Group 6E0000h–6EFFFFh 6F0000h–6FFFFFh M29DW640F (x16) 280000h–287FFFh 288000h–28FFFFh 290000h–297FFFh 298000h–29FFFFh 2A0000h–2A7FFFh 2A8000h–2AFFFFh 2B0000h–2B7FFFh 2B8000h–2BFFFFh 2C0000h–2C7FFFh 2C8000h– ...

Page 59

... M29DW640F Table 24. Block addresses (continued) (KBytes/ Block KWords) 119 64/32 120 64/32 121 64/32 122 64/32 123 64/32 124 64/32 125 64/32 126 64/32 127 64/32 128 64/32 129 64/32 130 64/32 131 64/32 132 64/32 133 64/32 134 8/4 135 8/4 136 8/4 137 8/4 138 8/4 139 8/4 140 8/4 141 8/4 1. Used as Extended Block addresses in Extended Block mode. Protection Block (x8) Group 700000h– ...

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... This area can be accessed only in Read mode by the final user Sub-section name Command set ID and algorithm data offset Device timing & voltage information Flash device layout Additional information specific to the Primary Algorithm (optional) 64 bit unique device number Description M29DW640F Table 25 , Table 26 , Table 27 , Table 28 Description ...

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... M29DW640F Table 27. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 00B5h 1Eh 3Ch 00C5h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h 24h 48h 0000h 25h ...

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... Number of Erase Blocks of identical size = 007Dh+1 Erase Block Region 2 Information Block size in Region 2 = 0100h * 256 Byte Erase Block Region 3 information Number of Erase Blocks of identical size = 0007h + 1 Erase Block Region 3 information Block size in region 3 = 0020h * 256 Bytes M29DW640F 8 MBytes x8, x16 Async specifies the number of 8 KBytes ...

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... M29DW640F Table 29. Primary Algorithm-specific Extended Query table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0033h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h 49h 92h 0005h 4Ah ...

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... C5h, C4h XXXX 63h C7h, C6h XXXX 64h C9h, C8h XXXX 64/74 Description Bank A information X = number of blocks in Bank A Bank B information X = number of blocks in Bank B Bank C information X = number of blocks in Bank C Bank D information X = number of blocks in Bank D Data 64 bit: unique device number M29DW640F Description Value ...

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... M29DW640F Appendix C Extended Memory Block The has an extra block, the Extended Block, that can be accessed using a dedicated command. This Extended Block is 128 Words in x16 mode and 256 Bytes in x8 mode used as a security block (to provide a permanent security identification number store additional information ...

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... Extended Block mode and return the device to Read mode. Table 31. Extended Block address and data Address Device x8 000000h-00000Fh 000010h-00007Fh 000080h-0000FFh 1. See Table 24: Block addresses . 2. ENS = Electronic Serial Number. 66/74 (1) x16 Factory Locked 000000h-000007h Random Number Security Identification (2) 000008h-00003Fh ESN 000040h-00007Fh M29DW640F Data Customer Lockable Determined Number by Customer Unavailable ...

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... M29DW640F Appendix D Block protection Block protection can be used to prevent any operation from modifying the data stored in the memory. The blocks are protected in groups, refer to Protection Groups. Once protected, Program and Erase operations within the protected group fail to change the data. There are three techniques that can be used to control Block Protection, these are the Programmer technique, the In-System technique and Temporary Unprotection. Temporary Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP ...

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... A12-A21 Block address Others = A12-A21 Block address Others = X Appendix D , Table 24 . M29DW640F Data Inputs/Outputs DQ15A–1, DQ14-DQ0 X , A15 = Pass = xx01h ID Retry = xx00h Pass = xx00h ID Retry = xx01h ...

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... M29DW640F Figure 20. Programmer Equipment Group Protect flowchart 1. Block Protection Groups are shown in START ADDRESS = GROUP ADDRESS Wait 4µ Wait 100µ A0, A2, A3 Wait 4µ Wait 60ns ...

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... Wait 10ms ADDRESS = CURRENT GROUP ADDRESS A0 Wait 4µ Wait 60ns Read DATA NO YES DATA = 00h YES Appendix D , Table 24 . M29DW640F INCREMENT CURRENT GROUP LAST NO GROUP YES PASS AI07757 ...

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... M29DW640F Figure 22. In-System Equipment Group Protect flowchart 1. Block Protection Groups are shown can be either when using the In-System Technique to protect the Extended Block START WRITE 60h ADDRESS = GROUP ADDRESS A0, A2 WRITE 60h ...

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... WRITE 40h ADDRESS = CURRENT GROUP ADDRESS A0, A2 IL, A1 Wait 4µs READ DATA ADDRESS = CURRENT GROUP ADDRESS A0, A2 IL, A1 YES DATA = 00h Appendix D , Table 24 . M29DW640F INCREMENT CURRENT GROUP LAST NO GROUP YES ISSUE READ/RESET COMMAND PASS AI07759 ...

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... M29DW640F Revision history Table 33. Document revision history Date 02-Dec-2005 10-Mar-2006 23-Aug-2006 10-Dec-2007 Revision 1.0 First issue. DQ7 changed to DQ7 for Program, Program During Erase Suspend and Program Error in 2.0 Converted to new template. Updated address values in data . 3 Amended data in Table 28: Device Geometry Definition 4 Applied Numonyx branding. ...

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... Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. 74/74 Please Read Carefully: applications. visiting Numonyx's website at http://www.numonyx.com. Copyright © 11/5/7, Numonyx, B.V., All Rights Reserved. M29DW640F ...

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