lm5066pmhx National Semiconductor Corporation, lm5066pmhx Datasheet - Page 6
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lm5066pmhx
Manufacturer Part Number
lm5066pmhx
Description
High Voltage System Power Management And Protection Ic With Pmbus
Manufacturer
National Semiconductor Corporation
Datasheet
1.LM5066PMHX.pdf
(48 pages)
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
lm5066pmhx/NOPB
Manufacturer:
NS/TI
Quantity:
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Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and conditions see the Electrical Characteristics.
Note 2: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. 2 kV rating for all pins except GATE which is rated for
1 kV.
Note 3: Current out of a pin is indicated as a negative value.
Note 4: OUT bias current (disabled) due to leakage current through an internal 1 MΩ resistance from SENSE to VOUT.
Note 5: Junction to ambient thermal resistance is highly application and board layout dependent. Specified thermal resistance values for the package specified
is based on a 4-layer, 4"x3", 2/1/1/2 oz. Cu board as per JEDEC standards is used.
Note 6: The GATE pin voltage is typically 13.6V above VIN when the LM5066 is enabled. Therefore, the Absolute Maximum Rating for VIN applies only when
the LM5066 is disabled, or for a momentary surge to that voltage since the Absolute Maximum Rating for the GATE pin is also 100V.
Note 7: All limits are guaranteed. All electrical characteristics having room temperature limits are tested during production at T
are guaranteed by correlating the electrical characteristics to process and temperature variations and applying statistical process control.
ADC and MUX
Telemetry Accuracy
Remote Diode Temperature Sensor
PMBus Pin Thresholds (SMBA, SDA, SCL)
Configuration Pin Thresholds (CL, RETRY)
Thermal
Symbol
V
t
V
ACQUIRE
P
V
V
I
I
I
I
AUXFSR
AUXLSB
V
T
I
I
INACC
DIODE
INFSR
INLSB
INL
INACC
V
LEAK
LEAK
INFSR
INLSB
V
V
θ
θ
t
V
ACC
ACC
RR
OL
JA
JC
IH
IH
IL
(Note
5)
Resolution
Integral Non-Linearity
Acquisition + Conversion Time
Acquisition Round Robin Time
Current input full scale range
Current input LSB
VAUX input full scale range
VAUX input LSB
Input voltage full scale range
Input voltage LSB
Input Current Accuracy
VAUX, VIN, VOUT
Input Power Accuracy
Temperature Accuracy Using Local
Diode
Remote Diode Resolution
External Diode Current Source
Diode Current Ratio
Data, Clock Input Low Voltage
Data, Clock Input High Voltage
Data Output Low Voltage
Input Leakage Current
Threshold Voltage
Input Leakage Current
Junction to Ambient
Junction to Case
Parameter
ADC only
Any Channel
Cycle all channels
CL = GND
CL = VDD
CL = GND
CL = VDD
VIN – SENSE = 50mV, CL = GND
VIN, VOUT = 48V
VAUX = 2.8V
VIN = 48V, VIN – SENSE = 50mV,
CL = VDD
T
High Level
Low Level
I
SDAI,SMBA,SCL = 5V
CL, RETRY = 5V
SINK
A
= 25°C to 85°C
= 3 mA
6
Conditions
Min
-3.0
-2.7
-4.5
2.1
0
3
A
= 25°C. All hot and cold limits
75.8
38.2
18.5
2.97
89.3
21.8
25.9
Typ
100
725
250
9.3
9.4
±4
12
40
1
2
9
4
Max
+3.0
+2.7
+4.5
325
0.9
5.5
0.4
10
1
5
Units
°C/W
°C/W
LSB
Bits
mV
mV
mV
bits
ms
µV
µV
µV
µA
µA
µA
µA
°C
µs
%
%
%
V
V
V
V
V
V