tza3010b NXP Semiconductors, tza3010b Datasheet - Page 11

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tza3010b

Manufacturer Part Number
tza3010b
Description
Tza3010b 30 Mbits/s Up To 3.2 Gbits/s A-rate Tm Laser Driver
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
Notes
1. The total power dissipation P
2. The specification of the offset voltage is guaranteed by design.
2003 Apr 07
Enable function: pin ENABLE
V
V
R
Alarm reset: pin ALRESET
V
V
R
Alarm operating current: pins MAXOP and ALOP
V
N
V
Alarm monitor current: pins MAXMON and ALMON
V
N
V
Reference block: pins RREF and VTEMP
V
V
TC
I
I
source(VTEMP)
sink(VTEMP)
IL
IH
IL
IH
ref(MAXOP)
ALOP(L)
ref(MAXMON)
ALMON(L)
RREF
VTEMP
pu(int)
pd(int)
MAXOP
MAXMON
30 Mbits/s up to 3.2 Gbits/s
A-rate
SYMBOL
VTEMP
will be V
CCO
laser driver
minus the laser diode voltage which results in a lower total power dissipation.
LOW-level input voltage
HIGH-level input voltage
internal pull-up resistance
LOW-level input voltage
HIGH-level input voltage
internal pull-down
resistance
reference voltage on
pin MAXOP
ratio of I
I
drain voltage at active
alarm
reference voltage on
pin MAXMON
ratio of I
I
drain voltage at active
alarm
reference voltage
temperature dependent
voltage
temperature coefficient of
V
source current of
pin VTEMP
sink current of pin VTEMP
MAXOP
MAXMON
VTEMP
PARAMETER
oper(alarm)
MON(alarm)
tot
and
and
is calculated with V
bias and modulation currents
disabled
bias and modulation currents
enabled
no reset
reset
I
I
I
I
I
I
R
C
T
note 4
T
MAXOP
oper(alarm)
ALOP
MAXMON
MON(alarm)
ALMON
j
j
RREF
RREF
V
V
= 25 C; C
= 25 to +125 C; note 4
CCO
CCO
= 500 A
= 10 k (1%);
< 100 pF
= 10 to 200 A
= 500 A
= 3.3 V
= 5.0 V
BIAS
CONDITIONS
= 10 to 200 A
= 7.5 to 150 mA
= 150 to 3000 A
11
VTEMP
= V
CCO
< 2 nF;
= 3.3 V and I
2.0
16
2.0
7
1.15
700
750
0
1.15
10
0
1.15
1.15
1
BIAS
MIN.
= 20 mA. In the application V
20
10
1.2
800
850
1.2
15
1.20
1.20
2.2
TYP.
Product specification
TZA3010B
0.8
30
0.8
15
1.25
900
950
0.4
1.25
20
0.4
1.25
1.25
MAX.
1
V
V
k
V
V
k
V
V
V
V
V
V
mV/K
mA
mA
UNIT
BIAS

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