tza3033 NXP Semiconductors, tza3033 Datasheet - Page 8

• Manufacturer Part Number: tza3033
• Description: Sdh/sonet Stm1/oc3 Transimpedance Amplifier
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Notes
1. All I
2. PSRR is defined as the ratio of the equivalent current change at the input ( I
1998 Jul 08
I
PSRR
Input: IPhoto
I
V
Data outputs: OUT and OUTQ
V
V
V
R
t
t
n(tot)
i(IPhoto)(p-p)
r
f
SYMBOL
R
bias(IPhoto)
O(CM)
o(se)(p-p)
OO
o
SDH/SONET STM1/OC3 transimpedance amplifier
tr
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package.
For example, a disturbance of +4 mV disturbance on V
current. The external capacitor between DREF and GND has a large impact on PSRR. The specification is valid with
an external capacitor of 1 nF.
PSRR
/ t
n(tot)
=
measurements were made with an input capacitance of C
total integrated RMS
noise current over
bandwidth
AGC loop constant
power supply rejection
ratio
input current on
pin IPhoto (peak-to-peak
value)
input bias voltage on
pin IPhoto
common mode output
voltage
single-ended output
voltage (peak-to-peak
value)
differential output offset
voltage
output resistance
rise time
fall time
------------------- -
I
IPhoto
V
CC
PARAMETER
referred to input; note 1
measured differentially;
note 2
V
V
AC coupled; R
AC coupled; R
single-ended; DC tested
20% to 80%
80% to 20%
CC
CC
f = 100 kHz to 10 MHz
f = 100 MHz
f = 90 MHz
f = 120 MHz
f = 150MHz
= 5 V
= 3.3 V
CONDITIONS
L
L
= 50
= 50
CC
8
at 10 MHz will typically add an extra 2 nA to the photodiode
V
42
i
= 1 pF. This was comprised of 0.5 pF for the
500
500
100
CC
MIN.
1.800 V
IPhoto
16
tbf
tbf
1
0.5
10
+1
+1
1048
150
50
tbf
tbf
CC
) to a change in supply voltage:
TYP.
1.700 V
Objective specification
+1800
+1600
260
+100
58
CC
MAX.
TZA3033
1.600 V
nA
nA
nA
dB/ms
mV
mV
mV
ps
ps
UNIT
A/V
A/V
A
A