tza3031ahl NXP Semiconductors, tza3031ahl Datasheet - Page 24

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tza3031ahl

Manufacturer Part Number
tza3031ahl
Description
Sdh/sonet Stm1/oc3 Laser Drivers
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
Table 1 Physical characteristics of bare die
2002 Aug 13
handbook, full pagewidth
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attach temperature
Attach time
SDH/SONET STM1/OC3 laser drivers
(1) Typical value.
PARAMETER
ALARM
V CC(R)
V CC(R)
DINQ
2.1 m PSG (PhosphoSilicate Glass) on top of 0.7 m silicon nitride
minimum dimension of exposed metallization is 90
1.2 m AlCu (1% Cu)
380 m nominal
2.000
silicon; electrically connected to GND potential through substrate contacts
<430 C; glue is recommended for attaching die
<15 s
GND
GND
GND
ENL
ALS
DIN
31
32
33
34
35
36
37
38
39
40
Fig.20 Bonding pad locations of TZA3031U.
2.000 mm (4.000 mm
30
1
29
2
28
3
x
27
4
TZA3031U
0
26
2 mm
5
y
0
24
2
25
6
)
(1)
24
7
23
8
22
9
VALUE
TZA3031AHL; TZA3031BHL;
10
21
20
19
18
17
16
15
14
13
12
11
GND
GND
BIAS
GND
LA
LAQ
GND
V CC(B)
V CC(B)
GND
90 m (pad size = 100
MBK849
2 mm
(1)
Product specification
TZA3031U
100 m)

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