tza3001ahl NXP Semiconductors, tza3001ahl Datasheet - Page 24

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tza3001ahl

Manufacturer Part Number
tza3001ahl
Description
Sdh/sonet Stm4/oc12 Laser Drivers
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
Table 1 Physical characteristics of bare die
2002 Aug 13
handbook, full pagewidth
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attach temperature
Attach time
SDH/SONET STM4/OC12 laser drivers
(1) Typical value.
PARAMETER
ALARM
V CC(R)
V CC(R)
DINQ
GND
GND
GND
2.1 m PSG (PhosphoSilicate Glass) on top of 0.7 m silicon nitride
minimum dimension of exposed metallization is 90
1.2 m AlCu (1% Cu)
380 m nominal
2.000
silicon; electrically connected to GND potential through substrate contacts
<430 C; glue is recommended for attaching die
<15 s
ENL
ALS
DIN
35
36
37
38
39
40
31
32
33
34
Fig.20 Bonding pad locations of TZA3001U.
2.000 mm (4.000 mm
30
1
29
2
28
3
27
4
x
TZA3001U
26
5
2 mm
0
y
0
24
25
2
6
(1)
)
24
7
23
8
VALUE
22
9
TZA3001AHL; TZA3001BHL;
21
10
20
19
18
17
16
15
14
13
12
11
BIAS
LA
LAQ
V CC(B)
V CC(B)
GND
GND
GND
GND
GND
90 m (pad size = 100
MGL192
2 mm
(1)
Product specification
TZA3001U
100 m)

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