zxms6006d Diodes, Inc., zxms6006d Datasheet - Page 4

• Manufacturer Part Number: zxms6006d
• Description: 60v N-channel Self Protected Enhancement Mode Intellifet ? Mosfet
• Manufacturer: Diodes, Inc.

Recommended Operating Conditions
Thermal Characteristics
Input Voltage Range
Ambient Temperature Range
High Level Input Voltage for MOSFET to be on
Low level input voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)
The ZXMS6006DG is optimized for use with µC operating from 3.3V and 5V supplies.
IntelliFET
ZXMS6006DG
Document number: DS35142 Rev. 1 - 2
®
100m
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
10m
100
90
80
70
60
50
40
30
20
10
10
0
100µ
1
Transient Thermal Impedance
Limited
by R
Single Pulse
15X15X1.6 mm
Single 1oz FR4
D=0.5
D=0.2
T
15X15X1.6 mm
Single 1oz FR4
amb
DS(on)
1m
V
T
Safe Operating Area
=25°C
DC
amb
Characteristic
DS
=25°C
1s
Drain-Source Voltage (V)
10m 100m
1
Pulse Width (s)
Limited by Over-Current Protection
100ms
10ms
Limit of s/c protection
D=0.1
1
10
D=0.05
10
Single Pulse
100
1ms
www.diodes.com
1k
4 of 9
100
Symbol
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
V
V
1
100µ
V
T
V
IN
IH
A
IL
P
0
Pulse Power Dissipation
15X15X1.6 mm
Single 1oz FR4
1m
25
Temperature (°C)
Derating Curve
10m 100m
Pulse Width (s)
50
Min
-40
0
3
0
0
Diodes Incorporated
75
A Product Line of
15X15X1.6 mm
Single 1oz FR4
Single Pulse
T
1
amb
50X50X1.6 mm
Single 2oz FR4
100
=25°C
10
Max
125
5.5
5.5
0.7
16
ZXMS6006DG
125
100
© Diodes Incorporated
December 2010
150
1k
Unit
°C
V
V
V
V