zxms6006d Diodes, Inc., zxms6006d Datasheet - Page 5

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zxms6006d

Manufacturer Part Number
zxms6006d
Description
60v N-channel Self Protected Enhancement Mode Intellifet ? Mosfet
Manufacturer
Diodes, Inc.
Datasheet
Electrical Characteristics
Notes:
IntelliFET
ZXMS6006DG
Document number: DS35142 Rev. 1 - 2
Static Characteristics
Drain-Source Clamp Voltage
Off State Drain Current
Input Threshold Voltage
Input Current
Input Current While Over Temperature Active
Static Drain-Source On-State Resistance
Continuous Drain Current (Note 4)
Continuous Drain Current (Note 5)
Current Limit (Note 7)
Dynamic Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 8)
Thermal Hysteresis (Note 8)
7. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully
8. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
operating range, so this part is not designed to withstand over-temperature for extended periods..
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
V
R
V
I
D(LIM)
t
t
DS(AZ)
I
DS(on)
d(on)
d(off)
T
DSS
IN(th)
I
I
IN
t
f
f
-
D
JT
r
f
f
www.diodes.com
Min
150
0.7
2.0
2.2
2.6
2.8
60
4
6
-
-
-
-
-
-
-
-
-
-
-
-
5 of 9
Typ
120
175
8.6
65
60
85
75
13
18
34
15
10
1
8
-
-
-
-
-
-
-
Max
100
200
400
125
100
1.5
70
1
2
-
-
-
-
-
-
-
-
-
-
-
-
Diodes Incorporated
Unit
µA
μA
μA
°C
°C
μs
V
V
A
A
A Product Line of
V
V
V
V
I
V
V
V
V
V
V
V
V
V
V
V
D
DS
DS
DS
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
DD
= 10mA
= +3V
= +5V
= +5V
= +3V, I
= +5V, I
= 3V; T
= 5V; T
= 3V; T
= 5V; T
= +3V
= +5V
= 12V, V
= 36V, V
= V
= 12V, I
ZXMS6006DG
GS
Test Condition
, I
A
A
A
A
D
D
D
D
= 25°C
= 25°C
= 25°C
= 25°C
IN
IN
= 1A
= 1A
= 1mA
= 1A, V
= 0V
= 0V
© Diodes Incorporated
-
-
December 2010
GS
= 5V

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