a29801tg-70uf AMIC Technology Corporation, a29801tg-70uf Datasheet - Page 7

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a29801tg-70uf

Manufacturer Part Number
a29801tg-70uf
Description
1m X 8 Bit / 512k X 16 Bit Cmos 5.0 Volt-only, Boot Sector Flash Memory
Manufacturer
AMIC Technology Corporation
Datasheet
Word/Byte Configuration
The
operate in the byte or word configuration. If the
set at logic ”1”, the device is in word configuration, I/O
are active and controlled by
If the
configuration, and only I/O
as an input for the LSB(A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must drive
the
selects the device.
data to the output pins.
during read operation. The
the device outputs array data in words and bytes. The
internal state machine is set for reading array data upon
device power-up, or after a hardware reset. This ensures that
no spurious alteration of the memory content occurs during
the power transition. No command is necessary in this mode
to obtain array data. Standard microprocessor read cycles
that assert valid addresses on the device address inputs
produce valid data on the device data outputs. The device
remains enabled for read access until the command register
contents are altered.
See "Reading Array Data" for more information. Refer to the
AC Read Operations table for timing specifications and to the
Read Operations Timings diagram for the timing waveforms,
l
current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes
programming data to the device and erasing sectors of
memory), the system must drive
determines whether the device accepts program data in
bytes or words, Refer to “Word/Byte Configuration” for more
information. The device features an Unlock Bypass mode to
facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to
program a word or byte, instead of four.
The “Word / Byte Program Command Sequence” section has
details on programming data to the device using both
standard and Unlock Bypass command sequence. An erase
operation can erase one sector, multiple sectors, or the
entire device. The Sector Address Tables indicate the
address range that each sector occupies. A "sector address"
consists of the address inputs required to uniquely select a
sector. See the "Command Definitions" section for details on
erasing a sector or the entire chip, or suspending/resuming
the erase operation.
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can then
read autoselect codes from the internal register (which is
separate from the memory array) on I/O
read cycle timings apply in this mode. Refer to the
"Autoselect Mode" and "Autoselect Command Sequence"
sections for more information.
I
current
(April, 2010, Version 0.1)
CE
OE
CC1
CC2
CE
and
in the DC Characteristics table represents the active
BYTE
in the DC Characteristics table represents the active
to V
BYTE
and
OE
specification
IH
pin determines whether the I/O pins I/O
OE
. For program operations, the
. I/O
pin is set at logic “0”, the device is in byte
pins to V
8
-I/O
OE
14
WE
is the output control and gates array
for
are tri-stated, and I/O
0
IL
-I/O
CE
.
BYTE
should remain at V
the
CE
7
and
are active and controlled by
write
is the power control and
WE
pin determines whether
OE
and
.
mode.
7
- I/O
CE
15
IH
BYTE
0
BYTE
pin is used
to V
all the time
. Standard
The
IL
15
15
, and
pin is
-I/O
-I/O
"AC
pin
0
0
6
Characteristics" section contains timing specification tables
and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status bits
on I/O
specifications apply. Refer to "Write Operation Status" for
more information, and to each AC Characteristics section for
timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode,
current consumption is greatly reduced, and the outputs are
placed in the high impedance state, independent of the
input.
The device enters the CMOS standby mode when the
more restricted voltage range than V
are held at V
in the standby mode, but the standby current will be greater.
The device requires the standard access time (t
is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is
completed.
I
standby current specification.
Output Disable Mode
When the
disabled. The output pins are placed in the high impedance
state.
The RESET pin provides a hardware method of resetting
the device to reading array data. When the system drives the
immediately terminates any operation in progress, tristates
all data output pins, and ignores all read/write attempts for
the duration of the RESET pulse. The device also resets the
internal state machine to reading array data. The operation
that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data
integrity.
Current is reduced for the duration of the RESET pulse.
When RESET is held at VSS ± 0.5V, the device draws
CMOS standby current (I
within VSS ± 0.5V, the standby current will be greater.
The RESET pin may be tied to the system reset circuitry. A
system reset would thus also reset the Flash memory,
enabling the system to read the boot-up firmware from the
Flash memory.
If RESET is asserted during a program or erase operation,
the RY/
operation is complete, which requires a time t
Embedded Algorithms). The system can thus monitor
RY/
complete. If RESET is asserted when a program or erase
operation is not executing (RY/
operation is completed within a time of t
RESET pins are both held at VCC ± 0.5V. (Note that this is a
RESET
RESET pin low for at least a period of t
CC3
and I
BY
7
BY
- I/O
CC4
: Hardware Reset Pin
to determine whether the reset operation is
OE
pin remains a “0” (busy) until the internal reset
IH
in the DC Characteristics tables represent the
0
, but not within VCC ± 0.5V, the device will be
. Standard read cycle timings and I
input is at V
CC4
AMIC Technology, Corp.
). If RESET is held at V
IH
, output from the device is
BY
A29801 Series
IH
pin is “1”), the reset
.) If
READY
CE
RP
READY
, the device
and RESET
CE
(not during
) before it
IL
CC
but not
(during
CE
read
OE
&

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