buk106-50s NXP Semiconductors, buk106-50s Datasheet - Page 9

• Manufacturer Part Number: buk106-50s
• Description: Buk106-50l/s; Buk106-50lp/sp Powermos Transistor Logic Level Topfet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
February 1993
PowerMOS transistor
Logic level TOPFET
Fig.18. Typical overload protection characteristics.
Fig.16. Maximum drain source supply voltage for
50
40
30
20
10
10
0.01
SC load protection. V
for SC load protection. V
0
8
6
4
2
0
0.1
10
1
t
Fig.17. Minimum protection supply voltage
0
0
d sc
VDDP(P) / V
VPSP / V
0.1
td sc / ms
= f(P
BUK106-50S
BUK106-50L
2
DS
2
); conditions: V
4
4
DDP(P)
PD / kW
VIS / V
VIS / V
PSP
1
= f(V
6
6
PS
= f(V
V
IS
min
PSP
); T
IS
); T
8
8
; V
PDSM
max
mb
BUK106-50L/S
BUK106-50L/S
mb
BUK106-50L/S
IS
150 ˚C
25 ˚C
5 V
10
10
10
9
Fig.20. Typical overload protection energy, T
Conditions: V
E
Fig.19. Typical overload protection characteristics.
1.0
0.8
0.6
0.4
0.2
SC(TO)
50
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Fig.21. Typical clamping characteristics, 25 ˚C.
0
0
0
I
-60
50
D
ID / A
Energy & Time
0
ESC(TO) / J
= f(V
= f(V
-20
DS
PS
DD
); conditions: R
2
); conditions: V
= 13 V; V
20
4
Time / ms
60
Energy / J
VDS / V
PS
Tmb / C
VPS / V
BUK106-50L
60
= V
IS
BUK106-50LP/SP
100
DS
6
= 100 ; t
PSN
= 13 V, parameter V
BUK106-50L/S
Product specification
, V
140
BUK106-50S
Tj(TO)
IS
8
= 8 V; SC load
typ.
BUK106-50L/S
p
BUK106-50L/S
BUK106-50L/S
180
VIS / V =
50 s
Rev 1.200
j
10
= 25 ˚C
220
10
10
5
5
70
IS