bh616uv1611 Brillance Semiconductor, bh616uv1611 Datasheet

bh616uv1611

Manufacturer Part Number

bh616uv1611

Description

Ultra Low Power/high Speed Cmos Sram 1m X 16 Bit

Manufacturer

Brillance Semiconductor

Datasheet

1.BH616UV1611.pdf (10 pages)

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R0201-BH616UV1611

Wide V

Ultra low power consumption :

High speed access time :

Automatic power down when chip is deselected

Easy expansion with CE1, CE2 and OE options

I/O Configuration x8/x16 selectable by LB and UB pin.

Three state outputs and TTL compatible

Fully static operation, no clock, no refresh

Data retention supply voltage as low as 1.0V

FEATURES

POWER CONSUMPTION

PIN CONFIGURATIONS

Brilliance Semiconductor, Inc.

Detailed product characteristic test report is available upon request and being accepted.

-55

-70

BH616UV1611AI

PRODUCT

= 3.6V

= 1.2V

FAMILY

low operation voltage : 1.65V ~ 3.6V

DQ14

DQ15

VCC

DQ8

DQ9

VSS

A18

Operation current : 12mA (Max.) at 55ns

Standby current : 5.0uA (Typ.) at 3.0V/25

Data retention current : 2.5uA(Typ.) at 25

55ns (Max.) at V

70ns (Max.) at V

DQ10

DQ11

DQ12

DQ13

48-ball BGA top view

A19

TEMPERATURE

-40

OPERATING

Industrial

A17

A14

A12

C to +85

Pb-Free and Green package materials are compliant to RoHS

Ultra Low Power/High Speed CMOS SRAM

1M X 16 bit

A16

A15

A13

A10

=1.65~3.6V

2mA (Max.) at 1MHz

DQ1

DQ3

DQ4

DQ5

CE1

A11

30uA

=3.6V V

STANDBY

CCSB1

DQ0

DQ2

VCC

VSS

DQ6

DQ7

CE2

reserves the right to change products and specifications without notice.

, Max)

25uA

=1.8V

1MHz

2mA

POWER DISSIPATION

The BH616UV1611 is a high performance, ultra low power CMOS

Static Random Access Memory organized as 1,048,576 by 16 bits

and operates in a wide range of 1.65V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with typical operating current of

1.5mA at 1MHz at 3.0V/25

1.65V/85

Easy memory expansion is provided by an active LOW chip enable

(CE1), an active HIGH chip enable (CE2) and active LOW output

enable (OE) and three-state output drivers.

The BH616UV1611 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BH616UV1611 is made with two chips of 8Mbit SRAM by

stacked multi-chip-package.

The BH616UV1611 is available in 48-ball BGA package.

CE2, CE1

10MHz

6mA

DQ15

DESCRIPTION

BLOCK DIAGRAM

DQ0

=3.6V

A12

A11

A10

12mA

Address

Buffer

Input

Max.

Operating

Control

, Max)

1.5mA

1MHz

C and maximum access time of 55ns at

Output

Buffer

Data

Input

Data

Decoder

Row

10MHz

BH616UV1611

5mA

=1.8V

1024

A19

8mA

A18

Max.

A17

Address Input Buffer

Revision

May

Column Decoder

A15

Memory Array

1024 x 16384

Write Driver

Column I/O

Sense Amp

BGA-48-0608

PKG TYPE

A14

A13

16384

1024

A16 A2 A1

2006

1.0

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bh616uv1611 Summary of contents

Page 1

... HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BH616UV1611 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BH616UV1611 is made with two chips of 8Mbit SRAM by stacked multi-chip-package. The BH616UV1611 is available in 48-ball BGA package. POWER DISSIPATION ...

Page 2

... state BH616UV1611 Function DQ0~DQ7 DQ8~DQ15 High Z High Z X High Z High Z H High Z High Z X High Z High Z L High Z High OUT OUT L High Z D OUT H ...

Page 3

... 0mA 1MHz DQ CE1 = CE2 = 0mA DQ CE1≧V -0.2V or CE2≦0.2V -0. ≧V ≦0. and not 100% tested. 3 BH616UV1611 AMBIENT RANG TEMPERATURE O O Industrial - ( 1.0MHz) A Input Capacitance Input/Output ...

Page 4

... CDR CE2≦0. KEY TO SWITCHING WAVEFORMS 1V/ns 0.5Vcc , CHZ1 C = 5pF+1TTL 30pF+1TTL L ALL INPUT PULSES 90% 90% 10% 10% ← → ← → Rise Time: Fall Time: 1V/ns 1V/ns 4 BH616UV1611 O C) MIN. TYP. (1) 1 2.5 V =1. ( WAVEFORM INPUTS ...

Page 5

... ADDRESS D OUT R0201-BH616UV1611 - + CYCLE TIME : 55ns DESCRIPTION MIN (CE1) -- (CE2) -- (LB, UB (CE1) 10 (CE2) 10 (LB, UB (CE1) -- (CE2 BH616UV1611 CYCLE TIME : 70ns TYP. MAX. MIN. TYP. MAX ...

Page 6

... The parameter is guaranteed but not 100% tested. R0201-BH616UV1611 t ACS1 (6) t ACS2 (5,6) t CLZ OLZ t ACS1 (5) t CLZ1 t ACS2 (5) t CLZ2 and CE2 5pF BH616UV1611 ( CHZ t OH (5) t OHZ (1,5) t CHZ (2,5) t CHZ2 t BDO Revision 1.0 May 2006 ...

Page 7

... CYCLE TIME : 55ns DESCRIPTION MIN (LB, UB (CE1, WE) 0 (CE2 (11 (5) (5) (11 ( (4,10) t OHZ 7 BH616UV1611 CYCLE TIME : 70ns TYP. MAX. MIN. TYP. MAX ...

Page 8

... The parameter is guaranteed but not 100% tested. 11 measured from the later of CE1 going low or CE2 going high to the end of write. CW R0201-BH616UV1611 (5) ( (12 (4,10) t WHZ ). = 5pF BH616UV1611 (11) (11) ( ( (8,9) (8) Revision 1.0 May 2006 ...

Page 9

... BSI product may be expected to result in significant injury or death, including life-support systems and critical medical instruments. PACKAGE DIMENSIONS D1 VIEW A 48 mini-BGA ( R0201-BH616UV1611 BH616UV1611 SPEED 55: 55ns 70: 70ns PKG MATERIAL -: Normal G: Green, RoHS Compliant P: Pb free, RoHS Compliant GRADE o o ...

Page 10

... Revision History Revision No. History 1.0 Initial Production Version - E3 pin is NC pin R0201-BH616UV1611 BH616UV1611 Draft Date May 10,2006 10 Remark Initial Revision 1.0 May 2006 ...

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