bs62lv1023sti Brillance Semiconductor, bs62lv1023sti Datasheet

bs62lv1023sti

Manufacturer Part Number

bs62lv1023sti

Description

Very Power/voltage Cmos Sram 128k

Manufacturer

Brillance Semiconductor

Datasheet

1.BS62LV1023STI.pdf (11 pages)

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R0201-BS62LV1023

• Vcc operation voltage : 2.4V ~ 3.6V

• Very low power consumption :

• High speed access time :

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2, CE1, and OE options

PIN CONFIGURATIONS

Brilliance Semiconductor Inc

FEATURES

BS62LV1023SC

BS62LV1023TC

BS62LV1023STC

BS62LV1023PC

BS62LV1023JC

BS62LV1023DC

BS62LV1023SI

BS62LV1023TI

BS62LV1023STI

BS62LV1023PI

BS62LV1023JI

BS62LV1023DI

PRODUCT FAMILY

Vcc = 3.0V

-70

PRODUCT

FAMILY

BSI

VCC

CE2

A11

A13

A15

A16

A14

A12

70ns (Max.) at Vcc = 3.0V

GND

DQ0

DQ1

DQ2

A16

A14

A12

C-grade : 20mA (Max.) operating current

I- grade : 25mA (Max.) operating current

0.02uA (Typ.) CMOS standby current

TEMPERATURE

-40

BS62LV1023SC

BS62LV1023SI

BS62LV1023PC

BS62LV1023PI

BS62LV1023JC

BS62LV1023JI

BS62LV1023TC

BS62LV1023STC

BS62LV1023TI

BS62LV1023STI

OPERATING

C to +70

C to +85

Very Low Power/Voltage CMOS SRAM

128K X 8 bit

VCC

A15

CE2

A13

A11

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

. reserves the right to modify document contents without notice.

2.4V ~ 3.6V

A10

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

RANGE

Vcc

Vcc= 3.0V

SPEED

(ns)

The BS62LV1023 is a high performance, very low power CMOS

Static Random Access Memory organized as 131,072 words by 8 bits

and operates from a wide range of 2.4V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.02uA and maximum access time of 70ns in 3V operation.

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable (CE2), and active LOW

output enable (OE) and three-state output drivers.

The BS62LV1023 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62LV1023 is available in DICE form, JEDEC standard 32 pin

8mmx13.4mm STSOP and 8mmx20mm TSOP.

450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP,

BLOCK DIAGRAM

DESCRIPTION

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

CE2

A12

A14

A16

A15

A13

A11

CE1

Vdd

Gnd

STANDBY

Vcc=3.0V

Address

CCSB1

Buffer

Input

1.0uA

1.5uA

POWER DISSIPATION

Control

, Max)

Output

Buffer

Data

Input

Data

Decoder

Row

Operating

Vcc=3.0V

20mA

25mA

, Max)

1024

BS62LV1023

Address Input Buffer

Column Decoder

Memory Array

Sense Amp

Write Driver

Column I/O

A3 A2 A1 A0 A10

1024 x 1024

SOP-32

TSOP-32

STSOP-32

PDIP-32

SOJ-32

DICE

SOP-32

TSOP-32

STSOP-32

PDIP-32

SOJ-32

DICE

PKG TYPE

1024

128

Revision 2.2

April 2001

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bs62lv1023sti Summary of contents

Page 1

... A13 CE2 BS62LV1023TC A15 7 BS62LV1023STC VCC 8 BS62LV1023TI 9 NC BS62LV1023STI A16 10 A14 11 12 A12 Brilliance Semiconductor Inc R0201-BS62LV1023 DESCRIPTION The BS62LV1023 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2 ...

Page 2

BSI PIN DESCRIPTIONS Name A0-A16 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc Gnd TRUTH TABLE MODE WE X Not selected (Power Down) ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL Voltage (2) Guaranteed Input High V IH (2) Voltage I Input Leakage Current IL I Output Leakage Current OL V Output Low Voltage OL V Output High Voltage ...

Page 4

BSI AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level AC TEST LOADS AND WAVEFORMS Ω 1269 3.3V OUTPUT OUTPUT 100PF INCLUDING Ω 1404 JIG AND SCOPE FIGURE 1A THEVENIN EQUIVALENT Ω ...

Page 5

BSI SWITCHING WAVEFORMS (READ CYCLE) (1,2,4) READ CYCLE1 ADDRESS D OUT (1,3,4) READ CYCLE2 CE1 CE2 D OUT (1,4) READ CYCLE3 ADDRESS OE CE1 CE2 D OUT NOTES high in read Cycle. 2. Device is continuously selected ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVWL AVWH WLWH WHAX WR1 t t E2LAX WR2 t ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS CE1 CE2 WE D OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and ...

Page 8

BSI ORDERING INFORMATION BS62LV1023 PACKAGE DIMENSIONS SOP -32 R0201-BS62LV1023 WITH PLATING BASE METAL SECTION A-A 8 BS62LV1023 SPEED 70: 70ns GRADE + -40 C ...

Page 9

BSI PACKAGE DIMENSIONS (continued) STSOP - 32 TSOP - 32 R0201-BS62LV1023 9 BS62LV1023 Revision 2.2 April 2001 ...

Page 10

BSI PACKAGE DIMENSIONS (continued) PDIP - 32 SOJ - 32 R0201-BS62LV1023 10 BS62LV1023 Revision 2.2 April 2001 ...

Page 11

BSI REVISION HISTORY Revision Description 2.2 2001 Data Sheet release R0201-BS62LV1023 Date Apr. 15, 2001 11 BS62LV1023 Note Revision 2.2 April 2001 ...

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