hcs245ms Intersil Corporation, hcs245ms Datasheet

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hcs245ms

Manufacturer Part Number
hcs245ms
Description
Radiation Hardened Octal Bus Transceiver, Three-state, Non-inverting
Manufacturer
Intersil Corporation
Datasheet
December 1992
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K or 1 Mega-RAD(Si)
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCS245MS is a Radiation Hardened Non-Invert-
ing Octal Bidirectional Bus Transceiver, Three-State,
intended for two-way asynchronous communication between
data busses. The HCS245MS allows data transmission from
the A bus to the B bus or from the B bus to the A bus. The
logic level at the direction input (DIR) determines the data
direction. The output enable input (OE) puts the I/O port in
the high-impedance state when high.
The HCS245MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS245MS is supplied in a 20 lead Weld Seal Ceramic
flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line
Package (D suffix).
Truth Table
H = High Voltage Level, L = Low Voltage Level,
X = Immaterial
To prevent excess currents in the High-Z (Isolation)
modes, all I/O terminals should be terminated with 10k
to 1M resistors.
- Bus Driver Outputs - 15 LSTTL Loads
- VIL = 0.8V Max
- VIH = VCC/2 Min
OE
H
L
L
CONTROL
INPUTS
DIR
H
X
L
5 A at VOL, VOH
B Data to A Bus
A Data to B Bus
Isolation
OPERATION
o
C to +125
Octal Bus Transceiver, Three-State, Non-Inverting
o
C
Functional Diagram
OUTPUT
ENABLE
B DATA
(18, 17, 16, 15,
14, 13, 12)
7-475
DIR
11
19
Pinouts
1
MIL-STD-1835 DESIGNATOR CDFP4-F20, LEAD FINISH C
GND
MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C
DIR
A0
A1
A2
A3
A4
A5
A6
A7
HCS245MS
ONE OF 8 TRANSCEIVERS
20 PIN CERAMIC DUAL-IN-LINE
GND
20 PIN CERAMIC FLAT PACK
DIR
A0
A1
A2
A3
A4
A5
A6
A7
10
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
10
TOP VIEW
TOP VIEW
Radiation Hardened
20
19
18
17
16
15
14
13
12
11
20
19
18
17
16
15
14
13
12
11
File Number
VCC
OE
B0
B1
B2
B3
B4
B5
B6
B7
TO OTHER
7 BUFFERS
9
(2, 3, 4, 5,
6, 7, 8)
A DATA
VCC
OE
B0
B1
B2
B3
B4
B5
B6
B7
2468.1

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hcs245ms Summary of contents

Page 1

... The HCS245MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS245MS is supplied lead Weld Seal Ceramic flatpack (K suffi Weld Seal Ceramic Dual-In-Line Package (D suffix). Truth Table ...

Page 2

... VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2) NOTE: 1. All voltages reference to device GND. 2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO Specifications HCS245MS Reliability Information Thermal Impedance . . . . . . . . . . . . . . . . Weld Seal DIC . . . . . . . . . . . . . . . . . . . 10mA Weld Seal Flat Pack . . . . . . . . . . . . . . ...

Page 3

... VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, VIL = 0.12(VCC RAD, IOH = -50 A Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND Three-State Output IOZ Applied Voltage = 0V or VCC Leakage Current Specifications HCS245MS GROUP (NOTES SUB- CONDITIONS GROUPS TEMPERATURE 9 10 10, 11 ...

Page 4

... Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. Specifications HCS245MS (NOTES 1, 2) TEMP- CONDITIONS ERATURE +25 C ...

Page 5

... VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VIL 0 GND 0 Specifications HCS245MS 1/2 VCC = 3V 0.5V VCC = 6V 0. for static burn-in. 5% for dynamic burn-in. TABLE 9. IRRADIATION TEST CONNECTIONS GROUND 10 5% for irradiation testing. Group E, Sub- AC Load Circuit ...

Page 6

... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com HCS245MS Three-State Low Load Circuit TPLZ ...

Page 7

... Material: Silver Epoxy WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 m x 100 m 4 mils x 4 mils Metallization Mask Layout NC A0 (2) A1 (3) A2 (4) A3 (5) A4 (6) A5 (7) (8) A6 HCS245MS HCS245MS DIR VCC (1) (20 (9) (10) (11) (12) A7 GND B7 B6 7-481 OE (19) (18) B0 ...

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