mc9s08sf4 Freescale Semiconductor, Inc, mc9s08sf4 Datasheet - Page 22

• Manufacturer Part Number: mc9s08sf4
• Description: Mc9s08sf4 Series Freescale Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

Flash Specifications
3.12
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
22
1
2
3
4
Supply voltage for program/erase
–40°C to 125°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
Num
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how Delta
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Delta defines typical data retention, please refer to
Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
11
12
13
The frequency of this clock is controlled by a software setting.
T
T = 25°C
L
to T
C
D Programmable reference generator inputs
D Programmable reference generator inputs
C Programmable reference generator step size
P Programmable reference generator voltage range
H
Flash Specifications
= –40 °C to 125 °C
4
2
(2)
Characteristic
1
3
Characteristic
(2)
Table 12. PRACMP Specifications (continued)
(2)
MC9S08SF4 Series MCU Data Sheet, Rev. 2
Table 13. Flash Characteristics
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Mass
D_ret
Burst
Page
Fcyc
Read
prog
Symbol
(V
(V
V
V
V
V
prgout
DD50
DD25
step
In1
In2
10,000
Min
150
)
)
2.7
2.7
15
—
5
V
–0.25
2.25
Min
2.7
In
/32
100,000
Typical
20,000
4000
100
—
—
—
—
—
9
4
Typical
5.0
2.5
—
0
Freescale Semiconductor
Max
6.67
200
5.5
5.5
—
—
—
Max
2.75
0.25
5.5
V
in
DD
cycles
years
supply.
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
Unit
LSB
V
V
V
V
V