mc9s08qb8 Freescale Semiconductor, Inc, mc9s08qb8 Datasheet - Page 24

• Manufacturer Part Number: mc9s08qb8
• Description: 8-bit Hcs08 Central Processor Unit
• Manufacturer: Freescale Semiconductor, Inc

Electrical Characteristics
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the memory section.
3.14
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
24
1
2
3
4
5
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
with V
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
The frequency of this clock is controlled by a software setting.
C
D
D
D
D
D
D
D
D
D
D
C
C
DD
EMC Performance
Supply voltage for program/erase
-40°C to 85°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
= 3.0 V, bus frequency = 4.0 MHz.
T
T = 25 °C
L
to T
H
= –40°C to + 85°C
Characteristic
5
2
(2)
3
3
1
4
MC9S08QB8 Series MCU Data Sheet, Rev. 2
(2)
Table 17. Flash Characteristics
(2)
V
Symbol
RI
RI
prog/erase
V
f
t
t
t
t
t
t
FCLK
D_ret
Burst
Page
Mass
Fcyc
Read
prog
DDBP
DDPE
—
DD
10,000
. These values are measured at room temperatures
Min
150
1.8
1.8
—
—
15
5
100,000
Typical
20,000
4000
100
—
9
4
4
6
Freescale Semiconductor
Max
6.67
200
3.6
3.6
—
—
—
—
—
DD
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
supply.