acpl-w314 Avago Technologies, acpl-w314 Datasheet - Page 7

• Manufacturer Part Number: acpl-w314
• Description: 0.4 Amp Output Current Igbt Gate Driver Optocouplers
• Manufacturer: Avago Technologies

Table 6. Switching Specifications (AC)
Over recommended operating conditions unless otherwise specified.
Table 7. Package Characteristics
Notes:
1. Derate linearly above 70°C free air temperature at a rate of 0.3 mA/°C.
2. Maximum pulse width = 10 µs, maximum duty cycle = 0.2%. This value is intended to allow for component tolerances for designs with I
3. Derate linearly above 85°C, free air temperature at the rate of 4.0 mW/°C.
4. Input power dissipation does not require derating.
5. Maximum pulse width = 50 µs, maximum duty cycle = 0.5%.
6. In this test, V
7. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
8. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 4500 V
9. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together.
10. PDD is the difference between t
11. Common mode transient immunity in the high state is the maximum tolerable |dV
12. Common mode transient immunity in a low state is the maximum tolerable |dV
13. This load condition approximates the gate load of a 1200 V/20 A IGBT.
14. The power supply current increases when operating frequency and Q
7
Parameter
Propagation Delay Time to High
Output Level
Propagation Delay Time to Low
Output Level
Propagation Delay Difference
Between Any Two Parts or Channels
Rise Time
Fall Time
Output High Level Common Mode
Transient Immunity
Output Low Level CommonMode
Transient Immunity
Parameter
Input-Output Momentary
Withstand Voltage
Input-Output Resistance
Input-Output Capacitance
minimum = 0.2 A. See Application section for additional details on limiting I
current limit I
Insulation Characteristics Table, if applicable.
will remain in the high state (i.e. V
will remain in a low state (i.e. V
OH
I-O
is measured with a DC load current. When driving capacitive load V
< 5 µA). This test is performed before 100% production test for partial discharge (method B) shown in the IEC/EN/DIN EN 60747-5-2
O
PHL
< 1.0 V).
O
and t
> 6.0 V).
Symbol
V
R
C
ISO
I-O
I-O
Symbol
t
t
PDD
t
t
|CM
|CM
PLH
PLH
PHL
R
F
between any two parts or channels under the same test conditions.
H
L
|
|
Min.
3750
Min.
0.1
0.1
-0.5
10
10
Typ.
10
0.6
Typ.
0.2
0.3
50
50
12
g
of the driven IGBT increases.
Max.
Max.
0.7
0.7
0.5
OL
peak.
CM
CM
Units
V
pF
/dt| of the common mode pulse, V
OH
rms
Units
µs
µs
µs
ns
ns
kV/µs
kV/µs
/dt| of the common mode pulse V
will approach V
Test Conditions
T
RH < 50% for 1 min.
V
Freq=1 MHz
A
I-O
Test Conditions
R
f = 10 kHz,
Duty Cycle = 50%,
I
T
V
F
A
= 25°C,
g
CM
= 7 mA, V
= 25°C,
= 500 V
= 75W, C
= 1000 V
CC
as I
OH
g
CC
= 1.5 nF,
rms
approaches zero amps.
= 30 V
for 1 second (leakage detection
CM
CM
, to assure that the output
to assure that the output
Fig.
8, 9,
10, 11,
12, 15
16
16
Fig.
Note
13
13
10
11
12
Note
8, 9
9
O
peak