km416s8030bn Samsung Semiconductor, Inc., km416s8030bn Datasheet - Page 8

• Manufacturer Part Number: km416s8030bn
• Description: 128mb Sdram Shrink Tsop 16bit Banks Synchronous Dram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

KM416S8030BN
AC CHARACTERISTICS
Notes :
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Notes :
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
Output rise time
Output fall time
Output rise time
Output fall time
Parameter
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
1. Rise time specification based on 0pF + 50
2. Fall time specification based on 0pF + 50
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
trh
tfh
trh
tfh
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
t
SAC
t
t
SHZ
SLZ
CC
OH
CH
SH
CL
SS
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Condition
Min
SS
10
10
3
3
3
3
2
1
1
.
to V
to V
shrink-TSOP
DD
SS
-H
, use these values to design to.
, use these values to design to.
1000
Max
6
6
6
6
1.37
1.30
Min
2.8
2.0
Min
10
12
Typ
3
3
3
3
2
1
1
3.9
2.9
-L
Max
4.37
1000
3.8
5.6
5.0
Max
6
7
6
7
Rev. 0.1 Aug. 1999
CMOS SDRAM
Volts/ns
Volts/ns
Volts/ns
Volts/ns
Unit
Preliminary
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Note
1,2
1,2
1,2
3
3
1
2
3
3
3
3
2