km416c1200c Samsung Semiconductor, Inc., km416c1200c Datasheet - Page 7

• Manufacturer Part Number: km416c1200c
• Description: 1m X 16bit Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: Samsung Semiconductor, Inc.

KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
NOTES
10.
11.
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4.
5.
6.
7.
8.
9.
KM416C/V10(2)00C/C-L Truth Table
An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles
before proper device operation is achieved.
Input voltage levels are Vih/Vil. V
Transition times are measured between V
Measured with a load equivalent to 2 TTL(5V)/1TTL(3.3V) loads and 100pF.
Operation within the
If
Assumes that t
This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V
t
characteristics only. If
duration of the cycle. If
modify-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions
is satisfied, the condition of the data out is indeterminate.
Either
These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in OE controlled write cycle
and read-modify-write cycles.
Operation within the
If
t
t
ASC
CP
WCS
RAS
t
t
H
RCD
RAD
L
L
L
L
L
L
L
L
is specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle.
, t
,
t
CAH
t
RWD
is greater than the specified
is greater than the specified
RCH
are referenced to the earlier CAS falling edge.
,
or
t
LCAS
CWD
t
RCD
RRH
X
H
H
H
L
L
L
L
L
,
t
AWD
must be satisfied for a read cycle.
t
t
RCD
t
RCD
RAD
t
WCS
and
t
(max).
CWD
UCAS
(max) limit insures that
(max) limit insures that
H
H
H
X
L
L
L
L
L
t
t
CPWD
WCS
t
CWD
IH
(min), the cycle is an early write cycle and the data output will remain high impedance for the
(min) and V
(min),
are non restrictive operating parameters. They are included in the data sheet as electrical
t
t
RAD
RCD
(max) limit, then access time is controlled by
W
(max) limit, then access time is controlled exclusively by
X
X
H
H
H
H
L
L
L
t
IH
RWD
(min) and V
IL
t
(max) are reference levels for measuring timing of input signals.
RWD
t
t
RAC
RAC
OE
(min),
X
X
H
H
H
H
L
L
L
(max) can be met.
(max) can be met.
IL
(max) and are assumed to be 5ns for all inputs.
t
AWD
DQ0 - DQ7
t
DQ-OUT
DQ-OUT
AWD
DQ-IN
DQ-IN
Hi-Z
Hi-Z
Hi-Z
Hi-Z
-
(min) and
t
t
RCD
RAD
(max) is specified as a reference point only.
(max) is specified as a reference point only.
t
CPWD
t
AA
DQ8-DQ15
DQ-OUT
DQ-OUT
t
.
CPWD
DQ-IN
DQ-IN
Hi-Z
Hi-Z
Hi-Z
Hi-Z
-
(min), then the cycle is a read-
t
CAC
CMOS DRAM
.
Word Read
Word Write
Byte Read
Byte Read
Byte Write
Byte Write
Standby
Refresh
STATE
oh
-
or V
ol
.