km416c1200c Samsung Semiconductor, Inc., km416c1200c Datasheet - Page 8

• Manufacturer Part Number: km416c1200c
• Description: 1m X 16bit Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: Samsung Semiconductor, Inc.

KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
13.
14.
15.
16.
17.
18.
19.
20.
t
t
t
t
t
If
For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K)/1024(1K) cycles of burst refresh must be executed
within 64ms/16ms before and after self refresh, in order to meet refresh specification.
For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immediately
before and after self refresh in order to meet refresh specification.
CWD
CWL
CSR
CHR
DS,
t
RASS
t
DH
is referenced to the earlier CAS falling edge before RAS transition low.
is referenced to the later CAS rising edge after RAS transition low.
is specified from W falling edge to the earlier CAS rising edge
is referenced to the later CAS falling edge at word read-modify-write cycle.
is independently specified for lower byte DQ(0-7), upper byte DQ(8-15)
100us, then RAS precharge time must use
UCAS
LCAS
RAS
t
CSR
t
RPS
instead of
t
CHR
.
t
RP
.
CMOS DRAM