tps30150ct STMicroelectronics, tps30150ct Datasheet - Page 2

• Manufacturer Part Number: tps30150ct
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
To evaluate the conduction losses use the following equation:
P = 0.64 x I
STPS30150CT/CW/CFP
THERMAL RESISTANCES
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
14
12
10
2/6
When the diodes 1 and 2 are used simultaneously :
Symbol
Symbol
8
6
4
2
0
R
Tj(diode 1) = P(diode1) x R
R
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
V
PF(av)(W)
th (j-c)
I
th (c)
R
F
**
*
F(AV)
Junction to case
* tp = 5 ms, < 2%
** tp = 380 µs, < 2%
Reverse leakage current
Forward voltage drop
+ 0.0073 I
= 0.05
Parameter
IF(av) (A)
= 0.1
F
2
(RMS)
= 0.2
th(j-c)
(Per diode) + P(diode 2) x R
TO-220FPAB
TO-220AB
TO-247
TO-220FPAB
TO-220AB
TO-247
= 0.5
=tp/T
Parameter
Tj = 25°C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Tj = 25 C
Tj = 125°C
= 1
T
Tests conditions
tp
Fig. 2: Average forward current versus ambient
temperature ( = 0.5, per diode).
18
16
14
12
10
8
6
4
2
0
V
I
I
I
I
0
F
F
F
F
IF(av)(A)
R
= 15 A
= 15 A
= 30 A
= 30 A
= V
=tp/T
th(c)
RRM
T
25
tp
Per diode
Total
Per diode
Total
Per diode
Total
Coupling
Coupling
Coupling
Rth(j-a)=15°C/W
50
Min.
Rth(j-a)=Rth(j-c)
Tamb(°C)
75
Typ.
0.69
0.8
Value
0.85
100
3.3
1.6
1.5
0.8
2.6
0.1
0.1
TO-220AB/TO-247/I²PAK/D²PAK
4
TO-220FPAB
Max.
0.92
0.75
0.86
6.5
8
1
125
°C/W
Unit
Unit
mA
µA
V
150