tps30150ct STMicroelectronics, tps30150ct Datasheet - Page 3

• Manufacturer Part Number: tps30150ct
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode).
250
200
150
100
1.0
0.8
0.6
0.4
0.2
0.0
0.01
50
1E-3
0.1
1E-3
0
0.01
1
Zth(j-c)/Rth(j-c)
IM(A)
P
= 0.1
= 0.2
Single pulse
P
= 0.5
ARM
I
M
ARM p
(1µs)
(t )
=0.5
t
0.1
1E-2
1E-2
1
t (µs)
tp(s)
p
t(s)
10
1E-1
1E-1
=tp/T
100
T
Tc=125°C
Tc=50°C
Tc=75°C
tp
1E+0
1E+0
1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220FPAB only).
140
120
100
Fig. 6-2: Relative variation of thermal impedance
junction
(TO-220FPAB)
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
1
0
1E-3
1E-3
0
0
P
Zth(j-c)/Rth(j-c)
IM(A)
P
ARM
= 0.5
= 0.2
= 0.1
Single pulse
ARM p
I
M
(25°C)
(t )
25
=0.5
t
to
1E-2
case
1E-2
50
STPS30150CT/CW/CFP
T (°C)
versus
j
tp(s)
1E-1
t(s)
75
1E-1
100
pulse
1E+0
=tp/T
125
duration.
Tc=125°C
Tc=25°C
T
Tc=75°C
tp
1E+0
1E+1
150
3/6