m40z111 STMicroelectronics, m40z111 Datasheet - Page 10

• Manufacturer Part Number: m40z111
• Description: 5v Or 3v Nvram Supervisor For Up To Two Lpsrams
• Manufacturer: STMicroelectronics

2.2
10/21
Table 2.
1. Valid for ambient operating temperature: T
2. V
3. V
4. t
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (as shown in
Figure
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, STMicroelectronics recommends
connecting a schottky diode from V
Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is
recommended for surface mount.
CC
Symbol
CC
noted).
until 200 µs after V
t
t
t
t
ER
t
ER
t
FB
transients, including those produced by output switching, can produce voltage
EDH
WPT
t
EDL
F
PFD
PFD
t
RB
R
(2)
(3)
(4)
(min) = 20ms for industrial temperature range - grade 6 device.
noise and negative going transients
6) is recommended in order to provide the needed filtering.
(max) to V
(min) to V
V
V
V
V
Chip enable propagation delay
Chip enable propagation delay
Chip enable recovery
Write protect time
Power down/up AC characteristics
PFD
PFD
PFD
SS
SS
to V
PFD
(min) to V
(max) to V
(min) to V
fall time of less than t
CC
(min) fall time of less than t
PFD
passes V
(min) V
PFD
SS
PFD
PFD
V
(max) V
CC
CC
(min) V
Parameter
(min).
fall time
rise time
FB
CC
CC
CC
A
may cause corruption of RAM data.
CC
to V
= –40 to 85°C; V
rise time
CC
fall time
(1)
F
that drive it to values below V
may result in deselection/write protection not occurring
SS
bus. These transients can be reduced if
(cathode connected to V
M40Z111W
M40Z111W
M40Z111W
M40Z111
M40Z111
M40Z111
CC
= 4.5 to 5.5V or 2.7 to 3.6V (except where
CC
bus. The energy stored in the
Min
300
10
10
40
40
40
1
CC
SS
, anode to V
by as much as
Max
200
150
250
15
20
10
20
Unit
SS
ms
µs
µs
µs
µs
ns
ns
ns
ns
µs
µs
).