ald110800 Advanced Linear Devices Inc (ALD), ald110800 Datasheet - Page 3

• Manufacturer Part Number: ald110800
• Description: Performance Characteristics Of Epad Matched Pair Mosfet Arrays
• Manufacturer: Advanced Linear Devices Inc (ALD)

ALD110800/ALD110900/
ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx
15
100000
10
20
10000
0
5
1000
100
0.01
FORWARD TRANSFER CHARACTERISTICS
5
4
2
10
0.1
3
0
-4
1
1
-4
0
SUBTHRESHOLD FORWARD TRANSFER
T
V
T
A
V GS(TH) =-3.5V
-2
DS
A
= +25°C
= 25°C
OUTPUT CHARACTERISTICS
V GS(TH) = +0.2V
= +10V
DRAIN-SOURCE ON VOLTAGE (V)
-3
GATE-SOURCE VOLTAGE (V)
V DS =+0.1V
T A = +25°C
2
V GS(TH) =-1.3V
0
GATE-SOURCE VOLTAGE (V)
V GS(TH) = 0.0V
CHARACTERISTICS
-2
2
V GS(TH) = -0.4V
4
V GS(TH) =+0.2V
-1
4
V GS(TH) = -1.3V
V GS(TH) =0.0V
TYPICAL PERFORMANCE CHARACTERISTICS
6
V GS(TH) = +0.8V
V GS(TH) = -3.5V
6
0
V GS -V GS(TH) =+3V
V GS -V GS(TH) =+2V
V GS(TH) = +1.4V
V GS -V GS(TH) =+4V
V GS -V GS(TH) =+1V
V GS -V GS(TH) =+5V
V GS(TH) =+0.8V
8
8
1
10
10
2
Advanced Linear Devices
2500
2000
1500
1000
500
1000
0.01
100
2.5
2.0
1.5
1.0
0.5
0
0.1
10
0
10
1
V
-0.5
-50
SUBTHRESHOLD FORWARD TRANSFER
GS(th)
T A = 25°C
DRAIN-SOURCE ON RESISTANCE
vs. DRAIN-SOURCE ON CURRENT
V
Slope = 116mV/decode
DS
-25
DRAIN-SOURCE ON CURRENT (µA)
V
=0.1V
-0.4
GS(th)
TRANSCONDUCTANCE vs.
~
AMBIENT TEMPERATURE
GATE-SOURCE VOLTAGE (V)
AMBIENT TEMPERATURE (°C)
CHARACTERISTICS
0
100
V
GS(th)
-0.3
25
V GS = V GS(TH) +4V
V
50
-0.2
GS(th)
V GS = V GS(TH) +6V
1000
75
V
-0.1
GS(th)
100
10000
V
GS(th)
125
3