ald110800 Advanced Linear Devices Inc (ALD), ald110800 Datasheet - Page 5

• Manufacturer Part Number: ald110800
• Description: Performance Characteristics Of Epad Matched Pair Mosfet Arrays
• Manufacturer: Advanced Linear Devices Inc (ALD)

ALD110800/ALD110900/
ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx
ZERO TEMPERETURE COEFFICIENT CHARACTERISTIC
-2.5
2.5
-0.3
-0.2
-0.4
-0.1
-5
0.3
0.2
0.0
0.1
0.6
5
0
1.2
0.9
0.3
0.2
0.6
0.5
0.3
0.0
DRAIN - GATE DIODE CONNECTED VOLTAGE
0
10000
TEMPCO vs. DRAIN SOURCE ON CURRENT
1
TRANCONDUCTANCE vs. DRAIN-SOURCE
0
0.1
-55°C ≤ T
V
T
DS
A
V GS(TH) =-3.5V
NORMALIZED SUBTHRESHOLD
CHARACTERISTICS RELATIVE
= 25°C
GATE THRESHOLD VOLTAGE
1000
DRAIN SOURCE ON CURRENT (µA)
DRAIN -SOURCE ON CURRENT(mA)
= +10V
DRAIN-SOURCE CURRENT (nA)
DRAIN-SOURCE ON VOLTAGE (V)
2
55°C
V GS(TH) =-1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V
0.2
A
10
≤ +125°C
ON CURRENT
100
4
0.5
100
10
TYPICAL PERFORMANCE CHARACTERISTICS
6
1.0
25°C
V
D
= 0.1V
1
1000
8
2.0
0.1
10
5.0
Advanced Linear Devices
4.0
3.0
2.0
1.0
0.0
1.6
1.2
0.8
0.4
-4.0
-1.0
-2.0
-3.0
-0.5
0.0
2.0
1.0
2.5
2.0
1.5
1.0
0.5
0.0
100000 10000
0
-50
-4
V GS(TH) = +0.2V
-25
SUBTHRESHOLD CHARACTERISTICS
V
t
V GS(TH) = 0.0V
V
T
TRANSFER CHARACTERISTICS
-25
= 0.0V
-2
DS
A
vs. AMBIENT TEMPERATURES
= 25°C
THRESHOLD VOLTAGE vs.
DRAIN -SOURCE CURRENT (nA)
AMBIENT TEMPERATURE
= +10V
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (
V GS(TH) = -0.4V
THRESHOLD VOLTAGES
55°C
GATE-SOURCE VOLTAGE (V)
0
0
1000
25
V
V
V
t
2
25
V GS(th) = -3.5V
DS
GS(th)
= 0.2V
V GS(th) = -0.4V
V GS(th) = 0.0V
V GS(th) = -1.3V
100
= +0.1V I
V GS(TH) = -3.5V
= 0.2V
50
4
V GS(TH) = +0.8V
25°C
10
D
V GS(TH) = -1.3V
75
6
75
= 1.0
V
V GS(TH) = +1.4V
GS(th)
V
V
O
V
t
I DS = +1µA
V DS = +0.1V
C)
µA
t
= 0.4V
t
1
= 1.4V
100
8
= 0.8V
= 0.4V
10
0.1
125
125
5