ald110900a Advanced Linear Devices Inc (ALD), ald110900a Datasheet - Page 2

• Manufacturer Part Number: ald110900a
• Description: Quad/dual N-channel Zero Threshold Epad Matched Pair Moset Array
• Manufacturer: Advanced Linear Devices Inc (ALD)

ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
Gate-Source voltage,
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V + = +5V (or open) V- = GND T A = 25
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Notes:
ALD110800/ALD110800A/ALD110900/ALD110900A
Gate Threshold Voltage
Offset Voltage
V GS(th)1 -V GS(th)2
Offset Voltage Tempco
GateThreshold Voltage Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Parameter
1
Consists of junction leakage currents
1
V
V
GS
DS
1
V GS(th)
V OS
TC VOS
TC VGS(th)
I DS (ON)
G FS
G FS
G OS
R DS (ON)
R DS (ON)
R DS (ON)
R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
Symbol
ALD110800A / ALD110900A
°
-0.01
C unless otherwise specified
Min
10
Typ
+1.6
0.00
12.0
-1.7
500
104
0.0
3.0
1.4
1.8
0.5
2.5
0.1
68
10
10
10
60
1
5
5
5
Advanced Linear Devices
Max
0.01
400
30
2
4
1
ALD110800/ ALD110900
-0.02
Min
10
+1.6
0.00
12.0
Typ
-1.7
500
104
0.0
3.0
1.4
1.8
0.5
2.5
0.1
68
10
10
10
60
2
5
5
5
Max
0.02
400
10
30
4
1
-65°C to +150°C
Unit
V
mV
µV/°C
mV/°C
mA
%
µmho

K
%
%
V
pA
nA
pA
nA
ns
ns
dB
mmho
pF
pF
0°C to +70°C
500 mW
+260°C
I DS =1µA, V DS = 0.1V
V DS1 = V DS2
I D = 1µA, V DS = 0.1V
I D = 20µA, V DS = 0.1V
I D = 40µA, V DS = 0.1V
V GS = +9.5V, V DS = +5V
V GS = +4.0V, V DS = +5V
V GS = +4.0V
V DS = +9.0V
V GS = +4.0V
V DS = +9.0V
V DS = +0.1V
V GS = +4.0V
V DS = +0.1V
V GS = +0.0V
V DS = +0.1V
V GS = +4.0V
I DS = 1.0µA
V - = V GS = -1.0V
V GS = -1.0V, V DS =+5V
V - = -5V
T A = 125°C
V DS = 0V V GS = +10V
T A =125°C
V + = 5V R L = 5K
V + = 5V R L = 5K
f = 100KHz
Test Conditions
10.6V
10.6V
2