ald13b50 Astec Powe, ald13b50 Datasheet

ald13b50

Manufacturer Part Number

ald13b50

Description

Sixteenth Brick Bus Converter

Manufacturer

Astec Powe

Datasheet

1.ALD13B50.pdf (6 pages)

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○ Power Management Switch Applications

•

Absolute Maximum Ratings

Marking

1.5 V drive

Low ON-resistance:R

Drain-Source voltage

Gate-Source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

Note 1: Mounted on a ceramic board.

Note 2: Mounted on an FR4 board.

temperature/current/voltage

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm

JJC

Characteristic

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)

Semiconductor

temperature/current/voltage,

DS(ON)

Pulse

= 63.2 mΩ (max) (@V

= 41.1 mΩ (max) (@V

= 31.0 mΩ (max) (@V

= 25.8 mΩ (max) (@V

SSM3J130TU

Reliability

and

(Ta = 25°C)

Equivalent Circuit

Symbol

(Note 1)

(Note 2)

GSS

DSS

stg

the

significant

etc.)

Handbook

-55 to 150

Rating

= -1.5 V)

-4.4

-8.8

800

500

150

= -1.8 V)

= -2.5 V)

= -4.5 V)

-20

± 8

are

)

change

within

(“Handling

(top view)

Unit

°C

the

Weight: 6.6 mg (typ.)

JEDEC

JEITA

TOSHIBA

UFM

SSM3J130TU

1: Gate

2: Source

3: Drain

2.1±0.1

1.7±0.1

2-2U1A

2009-05-11

―

Unit: mm

Related parts for ald13b50

ald13b50 Summary of contents

Page 1

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) ○ Power Management Switch Applications • 1.5 V drive • Low ON-resistance:R = 63.2 mΩ (max) (@V DS(ON 41.1 mΩ (max) (@V DS(ON 31.0 mΩ (max) (@V DS(ON) ...

Page 2

Electrical Characteristics Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Switching time Turn-off time Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

I – -10 -1.8 V VGS = -1.2 V -8V -1.5 V -4.5V -8.0 -2.5V -6.0 -4.0 -2.0 Common Source ° -0.2 -0.4 -0.6 -0.8 Drain–source voltage – V ...

Page 4

100 Common Source 25° 0.3 0.1 -1 -0.1 -0.01 Drain current I ( – 10000 5000 3000 1000 500 ...

Page 5

Single pulse a: Mounted on ceramic board (25.4mm × 25.4mm × 0.8mm , Cu Pad : 645 mm b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , ...

Page 6

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

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