ald13b50 Astec Powe, ald13b50 Datasheet
ald13b50
Related parts for ald13b50
ald13b50 Summary of contents
Page 1
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) ○ Power Management Switch Applications • 1.5 V drive • Low ON-resistance:R = 63.2 mΩ (max) (@V DS(ON 41.1 mΩ (max) (@V DS(ON 31.0 mΩ (max) (@V DS(ON) ...
Page 2
Electrical Characteristics Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Switching time Turn-off time Total Gate Charge Gate-Source Charge Gate-Drain Charge ...
Page 3
I – -10 -1.8 V VGS = -1.2 V -8V -1.5 V -4.5V -8.0 -2.5V -6.0 -4.0 -2.0 Common Source ° -0.2 -0.4 -0.6 -0.8 Drain–source voltage – V ...
Page 4
100 Common Source 25° 0.3 0.1 -1 -0.1 -0.01 Drain current I ( – 10000 5000 3000 1000 500 ...
Page 5
Single pulse a: Mounted on ceramic board (25.4mm × 25.4mm × 0.8mm , Cu Pad : 645 mm b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , ...
Page 6
RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...