2sa1315 TOSHIBA Semiconductor CORPORATION, 2sa1315 Datasheet - Page 2

• Manufacturer Part Number: 2sa1315
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Note: h
Characteristics
FE (1)
indicator
Characteristics
classification O: 70 to 140, Y: 120 to 240
A1315
Turn-on time
Storage time
Fall time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
V
V
Symbol
(BR) CEO
h
h
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
CBO
EBO
C
t
t
stg
f
on
t
T
ob
f
(Note)
V
V
I
V
V
I
I
V
V
−I
C
C
C
CB
EB
CE
CE
CE
CB
B1
= −10 mA, I
= −1 A, I
= −1 A, I
= −80 V, I
= −5 V, I
= −2 V, I
= −2 V, I
= −2 V, I
= −10 V, I
20 μs
= I
2
B2
= 0.05 A, duty cycle ≤ 1%
B
B
Test Condition
= −0.05 A
= −0.05 A
C
C
B
C
B
E
E
Input
= 0
= −1.5 A
= −0.5 A
= −0.5 A
= 0
= 0
= 0, f = 1 MHz
I
I
B1
B2
V
CC
= −30 V
Output
−80
Min
70
40
―
―
―
―
―
―
―
―
―
Typ.
−0.2
−0.9
0.2
1.0
0.2
―
80
45
―
―
―
―
2006-11-09
2SA1315
−1.0
−1.0
−0.5
−1.2
Max
240
―
―
―
―
―
―
―
MHz
Unit
μA
μA
pF
μs
V
V
V