2sa1931 TOSHIBA Semiconductor CORPORATION, 2sa1931 Datasheet - Page 2

• Manufacturer Part Number: 2sa1931
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Characteristic
A1931
Turn-on time
Storage time
Fall time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Tc = 25°C)
V
V
V
Symbol
(BR) CEO
h
h
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
CBO
EBO
C
t
t
stg
f
on
t
T
ob
f
V
V
I
V
V
I
I
V
V
−I
C
C
C
CB
EB
CE
CE
CB
CB
B1
20 μs
= −10 mA, I
= −2 A, I
= −2 A, I
= −50 V, I
= −7 V, I
= −1 V, I
= −1 V, I
= −1 V, I
= −10 V, I
= I
2
B2
= 0.15 A, duty cycle ≤ 1%
B
B
I
Test Conditions
Input
B2
= −0.2 A
= −0.2 A
C
C
C
C
B
E
E
= 0
= 1 A
= −3 A
= −1 A
= 0
= 0
= 0, f = 1 MHz
I
I
B2
B1
V
CC
= −30 V
Output
−50
100
Min
60
―
―
―
―
―
―
―
―
―
Typ.
−0.2
−0.9
100
0.1
1.0
0.1
60
―
―
―
―
―
2006-11-13
2SA1931
−0.4
−1.5
Max
300
−1
−1
―
―
―
―
―
―
―
MHz
Unit
μA
μA
pF
μs
V
V
V