2sa1681 TOSHIBA Semiconductor CORPORATION, 2sa1681 Datasheet - Page 3

• Manufacturer Part Number: 2sa1681
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−500 m
−300 m
−100 m
−50 m
−30 m
−10 m
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
−2.0
−1.6
−1.2
−0.8
−0.4
−10
−5
−3
−1
−1 m
0
0
0
0
Common emitter
V CE = −2 V
Common emitter
I C /I B = 20
−100
−3 m
−0.2
−1
Collector-emitter voltage V
Base-emitter voltage V
−70
−10 m
−50
Collector current I
−0.4
−2
−30 m −100 m
V
CE (sat)
I
I
Ta = 100°C
C
C
−30
– V
– V
−0.6
−3
Ta = 100°C
CE
BE
– I
−300 m
C
C
−0.8
−25
−4
25
BE
25
Common emitter
Ta = 25°C
I B = −2 mA
CE
(A)
(V)
−1
(V)
−20
−15
−10
−25
−1.0
−6
−4
−5
0
−3
−1.2
−5
−6
3
−500 m
−300 m
−100 m
−50 m
−30 m
−10 m
−5 m
−3 m
−0.5
−0.3
−0.1
500
300
100
−10
−100 m
50
30
10
−2
−1
−5
−3
−1
−1 m
−1 m
5
*: Single no repetitive pulse
Common emitter
V CE = −2 V
I C max (pulse)*
I C max (continuous)
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
Tested without a substrate.
−3 m
−3 m
−300 m
Ta = 100°C
Collector-emitter voltage V
−25
DC operation
(Ta = 25°C)
25
−10 m
−10 m
Collector current I
Collector current I
Safe Operating Area
−1
Ta = −25°C
−30 m −100 m
−30 m −100 m
V
BE (sat)
h
25
100
FE
100 ms*
10 ms*
−3
– I
– I
C
−300 m
−300 m
C
C
C
−10
V CEO max
Common emitter
I C /I B = 20
(A)
(A)
CE
1 ms*
−1
−1
(V)
−30
2006-11-09
2SA1681
−3
−3
−100
−5