2sc5376f TOSHIBA Semiconductor CORPORATION, 2sc5376f Datasheet - Page 3

• Manufacturer Part Number: 2sc5376f
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
1000
500
300
100
500
300
100
1.0
0.8
0.6
0.4
0.2
50
30
10
50
30
10
0
5
3
1
0.1
5
3
1
0.0
0
Common emitter
I C /I B = 20
0.3
Ta = 100°C
Collector-emitter voltage V
6
Base-emitter voltage V
1
0.4
Collector current I
1
Ta = 100°C
5
4
V
3
25
CE (sat)
2
I
I
C
C
– V
– V
0.8
10
-25
3
CE
BE
– I
3
30
C
-25
C
25
Common emitter
Ta = 25°C
BE
Common emitter
V CE = 2V
(mA)
CE
100
1.2
2
IB = 0.5 mA
(V)
4
(V)
300
1
1000
1.6
5
3
10000
5000
3000
1000
500
300
100
100
0.5
0.3
0.1
50
30
10
50
30
10
50
30
10
5
3
1
5
3
1
0.1
0.1
0.1
Common emitter
I C /I B = 20
Ta = 25°C
0.3
0.3
0.3
Collector-base voltage V
Collector current I
Collector current I
1
1
Ta = 100°C
1
-25
V
25
3
C
3
BE (sat)
h
ob
FE
10
– V
3
– I
10
– I
CB
C
30
C
C
C
10
30
CB
(mA)
(mA)
Common emitter
V CE = 2 V
100
I E = 0 A
f = 1 MHz
Ta = 25°C
100
(V)
30
2SC5376F
300
2002-01-16
300
1000
500
100