2sc5024 HITACHI, 2sc5024 Datasheet - Page 2

• Manufacturer Part Number: 2sc5024
• Description: Silicon Npn Epitaxial
• Manufacturer: HITACHI

2SC5024
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current
transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
See characteristic curves of 2SC4704.
2
1. Value at T
2SC5024B
2SC5024C
C
= 25°C.
Symbol
V
V
V
I
h
h
V
V
f
Cob
CBO
T
FE
FE
(BR)CBO
(BR)CEO
(BR)EBO
BE
CE (sat)
Min
200
200
4
—
60
100
—
—
200
—
Symbol
V
V
V
I
I
P
P
Tj
Tstg
Typ
—
—
—
—
—
—
—
—
300
5.0
C
C (peak)
CBO
CEO
EBO
C
C
*
1
Max
—
—
—
10
120
200
1.0
1.0
—
—
Unit
V
V
V
µA
V
V
MHz
pF
Ratings
200
200
4
0.2
0.5
1.4
8
150
–55 to +150
Test conditions
I
I
I
V
V
V
I
V
V
C
C
E
C
CB
CE
CE
CE
CB
= 10 µA, I
= 10 µA, I
= 1 mA, R
= 30 mA, I
= 160 V, I
= 5 V, I
= 5 V, I
= 20 V, I
= 30 V, I
C
C
C
E
Unit
V
V
V
A
A
W
°C
°C
C
E
BE
= 10 mA
= 30 mA
B
= 0
= 0
E
= 0, f = 1 MHz
= 30 mA
= 3 mA
=
= 0