2sc5000 TOSHIBA Semiconductor CORPORATION, 2sc5000 Datasheet - Page 3

• Manufacturer Part Number: 2sc5000
• Description: Npn Epitaxial Type Power Amplifier Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
0.05
0.03
0.01
500
300
100
0.5
0.3
0.1
10
50
30
10
10
0.01
0.01
8
6
4
2
0
5
3
1
5
3
1
0
Common emitter
V CE = 1 V
Common emitter
I C /I B = 20
Collector-emitter voltage V
80
2
Collector current I
Collector current I
0.1
0.1
25
V
−25
Tc = 100°C
70
4
BE (sat)
I
h
C
−25
FE
– V
25
– I
CE
C
– I
1
1
60
6
Tc = 100°C
C
C
C
50
Common emitter
Tc = 25°C
I B = 10 mA
CE
(A)
(A)
40
30
8
(V)
20
10
10
10
30
30
3
0.05
0.03
0.01
0.5
0.3
0.1
0.5
0.3
0.1
20
16
12
10
30
10
0.01
8
4
0
5
3
1
5
3
1
0
1
(continuous)
I C max (pulsed)*
*: Single nonrepetitive
Curves must be derated
linearly with increase in
temperature.
Common emitter
I C /I B = 20
I C max
Common emitter
V CE = 1 V
pulse Tc = 25°C
DC operation
Tc = 25°C
Collector-emitter voltage V
0.4
Base-emitter voltage V
3
Collector current I
0.1
Safe Operating Area
100 ms*
5
V
0.8
CE (sat)
100
I
C
−25
– V
10
Tc = 100°C
25
25
BE
Tc = −25°C
1 ms*
– I
1
1.2
C
10 ms*
C
V CEO max
BE
(A)
CE
30
100 μs*
(V)
1.6
(V)
50
10
2006-11-10
2SC5000
100
2.0
30