2sc5078 HITACHI, 2sc5078 Datasheet - Page 2

• Manufacturer Part Number: 2sc5078
• Description: Silicon Npn Epitaxial
• Manufacturer: HITACHI

2SC5078
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Note: Marking is “ZC–”.
Attention: This device is very sensitive to electro static discharge.
2
It is recommended to adopt appropriate cautions when handling this transistor.
Symbol
I
I
I
h
Cob
f
PG
NF
CBO
CEO
EBO
T
FE
Min
—
—
—
50
—
9
14
—
Symbol
V
V
V
I
P
Tj
Tstg
C
Typ
—
—
—
120
0.3
12
17
1.6
CBO
CEO
EBO
C
Max
10
1
10
160
0.8
—
20
2.5
Unit
mA
pF
GHz
dB
dB
Ratings
15
8
1.5
20
150
150
–55 to +150
A
A
Test conditions
V
V
V
V
V
V
V
f = 900 MHz
V
f = 900 MHz
CB
CE
EB
CE
CB
CE
CE
CE
= 15 V, I
= 8 V, R
= 1.5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
C
E
C
C
C
Unit
V
V
V
mA
mW
BE
E
C
C
= 10 mA
= 0, f = 1 MHz
= 5 mA
= 10 mA,
= 5 mA,
C
= 0
=
= 0