2sc5208 TOSHIBA Semiconductor CORPORATION, 2sc5208 Datasheet

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2sc5208

Manufacturer Part Number
2sc5208
Description
Silicon Npn Triple Diffused Type High-voltage Switching Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5208
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
DC-AC Inverter Applications
Absolute Maximum Ratings
High-speed switching: t
High breakdown voltage: V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristic
DC
Pulse
r
TOSHIBA Transistor Silicon NPN Triple Diffused Type
= 1.0 μs (max) ,t
CEO
= 400 V
(Ta = 25°C)
Symbol
V
V
V
T
I
P
CBO
CEO
EBO
I
CP
I
T
stg
C
B
C
j
2SC5208
f
= 1.5 μs (max)
−55~150
Rating
600
400
150
0.8
1.5
0.5
1.3
7
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.55 g (typ.)
JEDEC
JEITA
TOSHIBA
2-8M1A
2006-11-13
2SC5208
Unit: mm

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2sc5208 Summary of contents

Page 1

... V (Ta = 25°C) Symbol Rating Unit V 600 V CBO V 400 V CEO EBO 150 ° −55~150 °C stg 1 2SC5208 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.) 2006-11-13 ...

Page 2

... 0 0. (sat μ Input stg I = − duty cycle ≤ 2SC5208 Min Typ. Max ― ― 100 ― ― 100 20 ― ― ― ― ― 0.4 ― ― 1.0 ― ― 1.0 Output ― ...

Page 3

... 100°C 25 −40 Common emitter 100 300 1000 Collector current I (mA – (sat) C Common emitter −40°C 100 25 10 ...

Page 4

... Curves must be de-rated V CEO max linearly with increase in temperature. 0.001 0 100 Collector-emitter voltage – 0 Pulse width t (s) w 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 Ambient temperature Ta (°C) 300 1000 (V) 4 2SC5208 100 1000 P – 100 125 150 175 2006-11-13 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SC5208 20070701-EN 2006-11-13 ...

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