2sc5626 ISAHAYA ELECTRONICS CORPORRATION, 2sc5626 Datasheet
2sc5626
Manufacturer Part Number
2sc5626
Description
Transistor Npn Smd Type
Manufacturer
ISAHAYA ELECTRONICS CORPORRATION
Datasheet
1.2SC5626.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sc5626-T111-1
Manufacturer:
ISAHAYA
Quantity:
20 000
SY MBOL
SY MBOL
V
V
V
I
I
h
V
f
C
I
P
T
T
T
CBO
FE
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
EBO
CE(sat)
ob
j
stg
C
C
CBO
EBO
CEO
DESCURIPTION
Mitsubishi 2SC5626 is a super mini packege resin sealed
silicon NPN epitaxial ty pe transistor. It is designed f or high
f requency amplif y application.
FEATURE
APPLICATION
MAXIMUM RATINGS (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
・Super mini package f or easy mounting
・High gain band width product
Small ty pe machine high f requency amplif y
application
Gain band width product
Collector output capacitance
Storage temprature
C to B break down v oltage
C to E break down v oltage
E to B break down v oltage
Collector cut cf f current
Emitter cut of f current
DC f orward current gain
C to E Saturation v oltage
Collector to Base v oltage
Emitter to Base v oltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
PARAMETER
PARAMETER
ISAHAYA ELECTRONICS
V
V
V
I
V
V
I
I
I
CB
EB
CE
C
CE
CB
C
C
C
=10mA, I
-55to+150
=50μ A, I
=100μ A, R
=50μ A, I
=20V, I
=3V, I
=10V, I
=5V, I
=6V, I
RATINGS
+150
150
50
30
20
4
C
E
E
TEST CONDITIONS
E
=0
C
=-10mA
=0, f =1MHz
B
=0
=5mA
C
E
=1mA
=0mA
=0mA
BE
=∞
UNIT
mW
mA
℃
℃
V
V
V
Silicon NPN Epitaxial Type (Super Mini type)
For High Frequency Amplify Application
1 : BASE
CORPORATION
2 : EMITTER
3 : COLLECTOR
2.0
0.9
TERMINAL CONNECTOR
1.30
0.65
0.65
0.7
OUTLINE DRAWING
0～0.1
600
MIN
30
20
4
50
0.425
1
2
1.25
2.1
LIMITS
JEDEC : -
JEITA : SC-70
1100
TY P
148
1.2
0.1
TYPE NAME
0.425
2SC5626
3
S
MARKING
〈Transistor〉
0.3
0.15
MAX
0.3
0.5
0.5
1.5
Unit:mm
W
μ A
μ A
UNIT
MHz
pF
V
V
V
V
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