2sc5998 Renesas Electronics Corporation., 2sc5998 Datasheet
2sc5998
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2sc5998 Summary of contents
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... Silicon NPN Epitaxial High Frequency Medium Power Amplifier Features High Transition Frequency GHz typ. T High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ Power Added Efficiency (PAE) = 70% typ. at Pin = +16 dBm 500 MHz High Collector to Emitter Voltage ...
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... Electrical Characteristics Item DC current transfer ratio Collector output capacitance Reverse Transfer Capacitance Transition Frequency Maximum Available Gain Power Gain 1dB Compression Point at output Power Added Efficiency Main Characteristics Collector Power Dissipation Curve 1.0 *FR – mm) on PCB 0.8 0.6 0.4 0 100 Ambient Temperature Ta (° ...
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... Collector Output Capacitance vs. Collector to Base Voltage 4.0 3.0 2.0 1 Collector to Base Voltage V Transition Frequency vs. Collector Current GHz Collector Current I Rev.1.01, Jan 27, 2006, page MHz (V) CB 100 1000 (mA) C Maximum Available Gain, Maximum Stable Gain vs ...
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... Pin vs. Pout 3 Icq = 0.5 GHz (dBm) Operation Current, Power Added Efficiency 0 3 Icq = 0.5 GHz 0.4 0.3 0.2 0 (dBm) Harmonic Distortion 3 Icq = 0.5 GHz -10 -20 0 -20 -10 ...
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... Intermodulation Distortion 3 Icq = 0.5 GHz ∆ MHz -10 -20 -30 -20 -10 0 Input Power P in (dBm) 0.5GHz Evaluation Circuit VBB 1 µF 100 ohm Rev.1.01, Jan 27, 2006, page Fund (1tone IMD3 IMD5 ...
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... S parameter S11 f (MHz) MAG ANG 100 0.643 -108.1 200 0.635 -143.5 300 0.641 -158.8 400 0.645 -168.0 500 0.651 -174.7 600 0.657 -180.0 700 0.662 175.5 800 0.667 171.4 900 0.672 167.7 1000 0.677 164.2 1100 0.682 161.1 1200 0.686 158 ...
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... S parameter S11 f (MHz) MAG ANG 100 0.586 -142.9 200 0.616 -163.8 300 0.629 -172.9 400 0.638 -178.7 500 0.645 176.8 600 0.650 172.8 700 0.656 169.3 800 0.661 165.9 900 0.665 162.8 1000 0.670 159.8 1100 0.674 157.0 1200 0.678 154 ...
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... S parameter S11 f (MHz) MAG ANG 100 0.587 -158.5 200 0.618 -171.9 300 0.631 -178.0 400 0.640 177.3 500 0.647 173.4 600 0.652 170.0 700 0.657 166.8 800 0.662 163.7 900 0.666 160.8 1000 0.671 158.0 1100 0.675 155.4 1200 0.678 152 ...
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... S parameter S11 f (MHz) MAG ANG 100 0.607 -166.7 200 0.631 -176.2 300 0.646 178.9 400 0.654 175.0 500 0.660 171.4 600 0.664 168.2 700 0.668 165.1 800 0.672 162.2 900 0.676 159.4 1000 0.680 156.7 1100 0.684 154.2 1200 0.687 151 ...
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... A-A Section Ordering Information Part Name 2SC5998YC-TL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.01, Jan 27, 2006, page RENESAS Code Previous Code MASS[Typ.] PLSP0003ZB-A MPAK(T) / MPAK(T)V ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...