2sc5998 Renesas Electronics Corporation., 2sc5998 Datasheet - Page 4

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2sc5998

Manufacturer Part Number
2sc5998
Description
Transistors Silicon Npn Epitaxial High Frequency Medium Power Amplifier High Frequency Medium Power Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SC5998
Rev.1.01, Jan 27, 2006, page 4 of 10
0.6
0.5
0.4
0.3
0.2
0.1
Operation Current, Power Added Efficiency
-10
-20
40
35
30
25
20
15
10
40
30
20
10
5
0
0
0
-30
0
0
V
Icq = 20 mA
f = 0.5 GHz
V
Icq = 20 mA
f = 0.5 GHz
V
Icq = 20 mA
f = 0.5 GHz
CE
CE
CE
-20
= 3.6 V
= 3.6 V
5
= 3.6 V
5
Harmonic Distortion
Pin vs. Pout, PG
-10
10
10
P in (dBm)
P in (dBm)
P in (dBm)
15
15
0
20
20
10
2nd HD
3rd HD
Fund
25
25
20
P out
PG
30
30
30
100
80
60
40
20
0
Operation Current, Power Added Efficiency
-10
-20
40
35
30
25
20
15
10
0.6
0.5
0.4
0.3
0.2
0.1
40
30
20
10
0
5
0
0
-30
0
0
V
Icq = 20 mA
f = 0.5 GHz
V
Icq = 20 mA
f = 0.5 GHz
V
Icq = 20 mA
f = 0.5 GHz
CE
CE
CE
-20
= 4.5 V
= 4.5 V
= 4.5 V
5
5
Harmonic Distortion
Pin vs. Pout, PG
-10
10
10
P in (dBm)
P in (dBm)
P in (dBm)
15
15
0
20
20
Fund
10
2nd HD
3rd HD
25
25
20
PG
P out
30
30
30
100
80
60
40
20
0

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