mje13003l-x-tn3-a-t Unisonic Technologies, mje13003l-x-tn3-a-t Datasheet - Page 4

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mje13003l-x-tn3-a-t

Manufacturer Part Number
mje13003l-x-tn3-a-t
Description
Npn Silicon Power Transistors
Manufacturer
Unisonic Technologies
Datasheet
MJE13003
waveforms since they are in phase. However, for inductive loads, which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total switching time. For this reason, the following new terms
have been defined.
occur during the crossover interval and can be obtained using the standard equation from AN–222:
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (t
are guaranteed at 100°C.
RESISTIVE SWITCHING PERFORMANCE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
In general, t
As is common with most switching transistors, resistive switching is specified at 25°C and has become a
t
t
t
t
t
PSWT = 1/2 V
SWITCHING TIMES NOTE
SV
RV
FI
TI
C
= Current Fall Time, 90 ~ 10% I
= Crossover Time, 10% Vclamp to 10% I
= Current Tail, 10 ~ 2% I
= Voltage Storage Time, 90% I
= Voltage Rise Time, 10 ~ 90% Vclamp
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RV
+ t
CC
FI
I
≈ t
C
(t
C
C
. However, at lower test currents this relationship may not be valid.
) f
C
C
B1
to 10% Vclamp
C
NPN SILICON TRANSISTOR
C
and t
QW-R204-004,H
SV
) which
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