mje13003l-x-tn3-a-t Unisonic Technologies, mje13003l-x-tn3-a-t Datasheet - Page 5

• Manufacturer Part Number: mje13003l-x-tn3-a-t
• Description: Npn Silicon Power Transistors
• Manufacturer: Unisonic Technologies

MJE13003
FORWARD BIAS
breakdown. Safe operating area curves indicate I
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
limits are valid for duty cycles to 10% but must be derated when T
derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5.
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified
under clamped conditions so that the device is never subjected to an avalanche mode. Figure 6 gives PBSOA
characteristics.
The Safe Operating Area of Figures 5 and 6 are specified ratings (for these devices under the test conditions
shown.)
There are two limitations on the power handling ability of a transistor: average junction temperature and second
The data of Figure 5 is based on T
T
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
J(PK)
SAFE OPERATING AREA INFORMATION
0.05
0.02
0.01
may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
0.5
0.2
0.1
10
5
2
1
5
UNISONIC TECHNOLOGIES CO., LTD
Figure 5. Active Region Safe Operating Area
www.unisonic.com.tw
10
Collector-Emitter Voltage, V
Thermal Limit(Single Pule)
Bonding Wire Limit
Second Breakdown Limit
Curves Apply Below Rated
Tc=25℃
20
dc
50
5.0 ms
100
C
100μs
= 25°C; T
CE
200
(V)
V
CEO
1.0 ms
10 ms
300
J(PK)
500
C
-V
is variable depending on power level. Second breakdown pulse
CE
limits of the transistor that must be observed for reliable
1.6
1.2
0.8
0.4
C
0
≥25°C. Second breakdown limitations do not
0
Figure 6. Reverse Bias Safe Operating Area
Collector-Emitter Clamp Voltage,V
100
T
I
NPN SILICON TRANSISTOR
B1
J
≦100℃
=1A
200
5V
3V
300
V
BE(OFF)
1.5V
400
=9V
500
600
CE
(V)
QW-R204-004,H
700
800
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