2sc6041 TOSHIBA Semiconductor CORPORATION, 2sc6041 Datasheet - Page 4

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2sc6041

Manufacturer Part Number
2sc6041
Description
Toshiba Transistor Silicon Npn Triple-diffused Mesa Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
100
0.01
100
80
60
40
20
0.1
10
0
1
0
1
Curves must be derated
linearly w ith increase in
temperature.
Ic max (pulsed)
Ic max (continuous)
Tc = 25°C
Collector-emitter voltage V
Single nonrepetitive pulse
DC   operation
25
(T
c
0.001
=25°C)
0.01
Safe Operating Area
0.1
10
0.00001 0.0001
Case temperature T
50
10μ
1
100 ms
10
P
C
75
-T
C
100
100μ
1 ms
100 μs
Infinite heat sink
100
125
10 ms
0.001
C
V
CE O
CE
(°C)
10 μs
150
(V)
m ax
1 m
1000
0.01
175
Pulse width t
r
th(j-c)
4
10 m
0.1
- t
T
Curves s hould be applied in the
(Single nonrepetitive puls e)
w
therm al lim ited area.
0.001
C
w
(s)
Reverse Bias-Safe Operating Aria
0.01
  100 m
100
= 25°C (infinite heat s ink)
0.1
10
1
1
10
Collector-emitter voltage V
l
B
2= - 3A / L = 500 µs
Ic max (30A)
Nonrepeated pulse
10
@   Ta = 25°C
100
100
440 V,30 A
1000
1000
1700V,10mA
V
2006-06-20
CBO
CE
2SC6041
(V)
m ax
10000

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