2sc6078 TOSHIBA Semiconductor CORPORATION, 2sc6078 Datasheet

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2sc6078

Manufacturer Part Number
2sc6078
Description
Toshiba Transistor Silicon Npn Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
○ Power Amplifier Applications
○ Power Switching Applications
Absolute Maximum Ratings
Collector power dissipation
Low collector saturation voltage: V
High-speed switching: t
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristic
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
stg
= 0.4 μs (typ)
Pulse
DC
CE (sat)
(Ta = 25°C)
Symbol
V
V
V
V
2SC6078
T
I
P
CBO
CEX
CEO
EBO
I
CP
I
T
stg
C
B
= 0.5 V (max)(I
C
j
−55~150
Rating
1
160
160
150
1.0
1.8
80
7
3
5
C
= 1A)
Unit
°C
°C
W
V
V
V
V
A
A
A
Weight:1.5g(typ)
JEDEC
JEITA
TOSHIBA
1 : BASE
2 : COLLECTOR(HEAT SINK)
3 : EMITTER
2-10T1A
2006-11-16
2SC6078
Unit: mm

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2sc6078 Summary of contents

Page 1

... Unit V 160 V CBO V 160 V CEX CEO EBO 1 1 150 ° −55~150 °C stg 1 2SC6078 Unit BASE 2 : COLLECTOR(HEAT SINK) EMITTER JEDEC - JEITA - TOSHIBA 2-10T1A Weight:1.5g(typ) 2006-11-16 ...

Page 2

... 0,f = 1MH μ Input I t stg = −I = 100 Duty cycle ≦1% 2 2SC6078 Min Typ. Max 1.0 - - 1.0 - - 80 - - 80 - - 100 200 - 60 - - 0.3 - - 0.5 - - ...

Page 3

... Single nonrepetitive pulse (V) Base-emitter voltage 0.1 0.01 10 0.001 0.1 10 0.001 3 2SC6078 I – 100℃ 25 − 55 0.5 1 1 – (sat) C Common emitter IC/ Single nonrepetitive pulse Ta = 100°C −55 25 0.01 0.1 1 ...

Page 4

... Ta = 25°C Curves must be derated linearly with increase in temperature. V CEO MAX. 0.001 0 Collector−emitter voltage – Single nonrepetitive pulse Ta = 25°C Curves should be applied in thermal limited area. 0 Pulse width t ( ms* 100 (V) 4 2SC6078 100 1000 2006-11-16 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SC6078 20070701-EN 2006-11-16 ...

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