2sc6061 TOSHIBA Semiconductor CORPORATION, 2sc6061 Datasheet - Page 2

• Manufacturer Part Number: 2sc6061
• Description: Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Figure 3 Switching Time Test Circuit & Timing Chart
Marking
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Switching time
Characteristic
Lot code (year)
Dot: even year
No dot: odd year
I
B1
W N
Duty cycle < 1%
Rise time
Storage time
Fall time
20 μs
I
B2
(Ta = 25°C)
Input
Lot code (month)
V
V
Part No. (or abbreviation code)
V
V
Symbol
(BR) CBO
(BR) CEO
h
h
h
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
FE (3)
CBO
EBO
t
stg
t
t
I
I
r
f
B1
B2
V
V
V
I
I
V
V
V
I
I
See Figure 3 circuit diagram
V
I
C
C
C
C
B1
CC
CB
EB
CE
CE
CE
CC
= 1 mA, I
= 10 mA, I
= 0.3 A, I
= 0.3 A, I
= −I
≒72 V, R
= 180 V, I
= 7 V, I
= 2 V, I
= 2 V, I
= 2 V, I
Output
B2
2
= 10 mA
B
B
B
Test Conditions
C
C
C
C
B
= 0
= 0.01 A
= 0.01 A
= 0
= 1 mA
= 0.1 A
= 0.3 A
L
E
= 0
= 24 Ω
= 0
Min
180
120
100
120
60
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Typ.
0.1
1.5
0.2
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2006-11-13
2SC6061
0.14
Max
100
100
300
1.1
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Unit
nA
nA
μs
V
V
V
V