2sc6139 TOSHIBA Semiconductor CORPORATION, 2sc6139 Datasheet - Page 2

• Manufacturer Part Number: 2sc6139
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Note 3 : A line under a Lot No. identifies the indication of product Labels.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Characteristics
C6139
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
(Ta = 25°C)
Part No. (or abbreviation code)
Note 3
V
V
V
Symbol
h
h
(BR) CEO
CE (sat)
BE (sat)
I
I
FE
FE
CBO
C
EBO
f
ob
T
(1)
(2)
V
V
I
V
V
I
I
V
V
C
C
C
CB
EB
CE
CE
CB
CE
= 10mA, I
= 0.5A, I
= 0.5A, I
2
= 6V, I
= 160V, I
= 5V, I
= 5V, I
= 10V, I
= 10V, I
Test Condition
B
B
C
C
C
B
C
C
= 50mA
= 50mA
= 0
= 1mA
= 0.1A
E
= 0
= 0, f = 1MHz
= 100mA
= 0
Min
160
140
80
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
100
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2009-09-28
2SC6139
Max
100
100
280
0.5
1.3
⎯
⎯
⎯
⎯
MHz
Unit
ｎA
ｎA
pF
V
V
V