2sc6100 TOSHIBA Semiconductor CORPORATION, 2sc6100 Datasheet - Page 2

• Manufacturer Part Number: 2sc6100
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Figure 1
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Switching time
I
B1
Duty cycle < 1%
Characteristics
20 μs
Switching Time Test Circuit &
Timing Chart
Storage time
I
B2
Rise time
Fall time
Input
I
I
B1
B2
(Ta = 25°C)
V
V
V
V
CC
Symbol
h
h
(BR) CEO
CE (sat)
BE (sat)
I
I
FE
FE
CBO
C
EBO
t
stg
t
t
ob
r
f
Output
(1)
(2)
V
V
I
V
V
I
I
V
See Figure 1.
V
I
C
C
C
B1
CB
EB
CE
CE
CB
CC
= 10 mA, I
= 1 A, I
= 1 A, I
2
= −I
= 7 V, I
= 100 V, I
= 2 V, I
= 2 V, I
= 10 V, I
∼ − 30 V, R
B2
B
B
Test Condition
= 33.3 mA
= 20 mA
= 20 mA
C
C
C
B
E
= 0
= 0.3 A
= 1 A
L
E
= 0
= 0, f = 1 MHz
= 30 Ω
Marking
= 0
W
B
Min
400
200
50
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Part No. (or abbreviation code)
Typ.
500
120
13
40
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2009-01-14
2SC6100
1000
0.14
1.10
Max
100
100
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Unit
nA
nA
pF
ns
V
V
V