hn7g02fe TOSHIBA Semiconductor CORPORATION, hn7g02fe Datasheet - Page 2

• Manufacturer Part Number: hn7g02fe
• Description: Toshiba Multichip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1
Q2
Switching Time Test Circuit
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input resistor
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
(a) Switching time test circuit
(
(MOSFET)
2.5 V
Transistor
0
10 µ S
V
Characteristics
IN
Characteristic
Electrical Characteristics
IN
)
Turn-on time
Turn-off time
Electrical Characteristics
I
D
V
DD
OUT
V
R
Symbol
(BR) DSS
DS (ON)
⎪ Y
I
I
C
C
C
GSS
DSS
V
V
t
t
Symbol
oss
on
off
rss
V
D.U. < = 1%
V
(Z
Common source
Ta = 25°C
iss
CE (sat)
th
fs
I
I
CBO
h
EBO
DD
IN
R1
⎪
out
FE
: t
= 3 V
r
= 50 Ω )
, t
f
V
I
V
V
V
I
V
V
V
V
V
< 5 ns
D
D
GS
DS
DS
DS
DS
DS
DS
DD
DD
= 100 µ A, V
= 10 mA, V
V
V
V
I
(Ta = 25°C)
C
CB
EB
CE
= 10 V, V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, I
= 3 V, I
= − 5 mA, I
(Ta = 25°C)
2
= − 50 V, I
= − 5 V, I
= − 5 V, I
D
D
D
D
Test Condition
GS
GS
GS
(b) V
(c) V
Test Condition
GS
= 0.1 mA
= 10 mA
DS
GS
= 10 mA, V
= 10 mA, V
GS
B
C
C
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
E
= 2.5 V
V
V
= 0
= 0
= − 0.25 mA
= 0
= 0
= − 1 mA
OUT
IN
GS
DS
= 0
⎯
GS
GS
= 0~2.5 V
= 0~2.5 V
V
DS (ON)
2.5 V
V
DD
0
3.29
Min
120
Min
0.7
20
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
on
10%
t
90%
r
Typ.
− 0.1
Typ.
11.0
0.16
0.19
4.7
3.3
9.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
50
4
t
90%
HN7G02FE
off
2005-03-23
− 100
− 100
Max
− 0.3
6.11
Max
400
1.3
12
t
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
1
f
10%
Unit
Unit
mS
k Ω
nA
nA
µ A
µ A
pF
pF
pF
µ s
V
V
V
Ω