hn7g04fu TOSHIBA Semiconductor CORPORATION, hn7g04fu Datasheet - Page 2

• Manufacturer Part Number: hn7g04fu
• Description: Toshiba Multichip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 Electrical Characteristics
Q2 Electrical Characteristics
(Note) hFE Classification
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Characteristic
Characteristic
A : 300~600, B : 500~1000
V
V
h
(Ta = 25°C)
(Ta = 25°C)
V
V
CE (sat)(1)
CE (sat)(2)
Symbol
FE (Note)
Symbol
V
V
R1/R2
BE (sat)
CE (sat)
I
I
I
I
I
I(OFF)
CBO
C
CBO
CEO
h
C
EBO
EBO
I(ON)
R1
f
f
FE
T
ob
T
ob
V
V
V
I
I
I
V
V
V
V
V
V
I
V
V
V
V
C
C
C
C
CB
EB
CE
CE
CB
CB
CE
EB
CE
CE
CE
CE
CB
= −10 mA, I
= −200 mA, I
= −200 mA, I
= 5 mA, I
2
= −15 V, I
= −5 V, I
= −2 V, I
= −2 V, I
= −10 V, I
= 50 V, I
= 50 V, I
= 6 V, I
= 5 V, I
= 0.2 V, I
= 5 V, I
= 10 V, I
= 10 V, I
Test Condition
Test Condition
B
C
C
C
C
C
C
C
E
B
E
= 0.25 mA
C
= 0
= 10 mA
= 0.1 mA
B
E
E
= 0
= −10 mA
= −10 mA
= 0
= 0
= 5 mA
= 0, f = 1 MHz
B
B
= 5 mA
= −0.5 mA
= 0
= 0, f = 1 MHz
⎯
⎯
= −10 mA
= −10 mA
0.081
0.191
Min
300
Min
0.7
0.5
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7
−0.87
0.213
−110
Typ.
Typ.
−15
130
250
4.2
0.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
3
HN7G04FU
2003-03-23
0.232
−100
−100
1000
−250
Max
−1.2
Max
0.15
−30
100
500
0.3
1.8
1.0
13
⎯
⎯
⎯
⎯
⎯
MHz
MHz
Unit
Unit
mV
kΩ
nA
nA
pF
nA
nA
pF
V
V
V
V